Inventor · disambiguated record
Yuefei Yang
Also filed as: YANG YUEFEI
6 granted patents·1 pending application·20 citations·filing 2012–2024
75Inventor score
Top patents by PatentIndex Score
7 records- 0195US11276764B1Method of making high frequency InGaP/GaAs HBTsGLOBAL COMMUNICATION SEMICONDUCTORS LLC·Filed 2020·Granted Mar 15, 2022·11 cites·20 claims
- 0293US11817839B2Single-crystal bulk acoustic wave resonator and method of making thereofGLOBAL COMMUNICATION SEMICONDUCTORS LLC·Filed 2020·Granted Nov 14, 2023·5 cites·12 claims
- 0365US9269784B2Gallium arsenide based device having a narrow band-gap semiconductor contact layerGLOBAL COMM SEMICONDUCTORS INC·Filed 2014·Granted Feb 23, 2016·3 cites·17 claims
- 0455US2024243723A1Bulk Acoustic Wave Resonator with Improved Lateral Wave SuppressionGLOBAL COMMUNICATION SEMICONDUCTORS LLC·Filed 2024·Application pending·0 cites
- 0551US8716757B1Monolithic HBT with wide-tuning range varactorYANG YUEFEI·Filed 2012·Granted May 6, 2014·1 cites·24 claims
- 0649US12155368B2Support structure for bulk acoustic wave resonatorGLOBAL COMMUNICATION SEMICONDUCTORS LLC·Filed 2021·Granted Nov 26, 2024·0 cites·10 claims
- 0748US11335815B1Method of making wide tuning range and super low capacitance varactor diodesGLOBAL COMMUNICATION SEMICONDUCTORS LLC·Filed 2021·Granted May 17, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →