Inventor · disambiguated record
Yuancheng Yang
Also filed as: YANG YUANCHENG
36 granted patents·33 pending applications·20 citations·filing 2014–2025
94Inventor score
Top patents by PatentIndex Score
69 records- 0196US12075621B2Three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 27, 2024·2 cites·16 claims
- 0296US11935596B2Three-dimensional memory devices having polysilicon layer and bonded semiconductor structures and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Mar 19, 2024·4 cites·20 claims
- 0395US12020750B2Three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jun 25, 2024·2 cites·17 claims
- 0495US11929119B2Three-dimensional memory devices and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Mar 12, 2024·3 cites·18 claims
- 0593US12082408B2Three-dimensional memory devices having first semiconductor structure bonded with second semiconductor structure each including peripheral circuit and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Sep 3, 2024·2 cites·20 claims
- 0688US2025378879A1Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0787US12262533B2Dynamic flash memory (DFM) with multi-cellsYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Mar 25, 2025·1 cites·14 claims
- 0885US12191269B2Three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jan 7, 2025·1 cites·20 claims
- 0985US12069854B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 20, 2024·1 cites·20 claims
- 1084US12412628B2Methods for forming three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 1182US9502310B1Integration method for a vertical nanowire transistorUNIV BEIJING·Filed 2016·Granted Nov 22, 2016·4 cites·7 claims
- 1282US2025359011A1Dynamic flash memory (dfm) with ring-type insulator in channel for improved retentionYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 1381US2025089256A1Three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1477US2025336864A1Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 1576US12327592B2Vertical memory devices and methods for operating the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Granted Jun 10, 2025·0 cites·20 claims
- 1676US2025070066A1Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1775US2025016985A1Memory devices having vertical transistors and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1874US2024389331A1Peripheral circuit having recess gate transistors and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1972US2025267849A1Memory devices having vertical transistors and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 2070US12439584B2Dynamic flash memory (DFM) with ring-type insulator in channel for improved retentionYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Oct 7, 2025·0 cites·10 claims
- 2170US12193230B2Three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
- 2269US12328867B2Memory devices having vertical transistors and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jun 10, 2025·0 cites·20 claims
- 2369US12127393B2Memory devices having vertical transistors and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Oct 22, 2024·0 cites·20 claims
- 2468US12089413B2Peripheral circuit having recess gate transistors and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Sep 10, 2024·0 cites·20 claims
- 2566US12176309B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Dec 24, 2024·0 cites·16 claims
- 2666US12027207B2Vertical memory devices and methods for operating the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jul 2, 2024·0 cites·10 claims
- 2766US2025356919A1Memory devices, systems, and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 2864US12388037B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 12, 2025·0 cites·19 claims
- 2962US12444679B2Three-dimensional memory devices having a cylindrical body and plate line contact segmentsYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·20 claims
- 3062US2025159872A1Semiconductor device and fabrication method thereof, memory systemYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 3161US12322596B2Methods for thermal treatment of a semiconductor layer in semiconductor deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jun 3, 2025·0 cites·20 claims
- 3260US12274055B2Control gate structures in three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
- 3360US12272645B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·18 claims
- 3460US2025359067A1Managing slit structures in semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 3559US12451452B2Three-dimensional memory and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·20 claims
- 3659US12406928B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·15 claims
- 3759US2025089235A1Semiconductor devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 3858US12278209B2Peripheral circuit having recess gate transistors and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Apr 15, 2025·0 cites·20 claims
- 3958US12082399B2Memory devices having vertical transistors in staggered layoutsYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·19 claims
- 4058US2025176160A1Semiconductor devices and manufacturing methods thereof and memory systemsYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 4158US2025311239A1Semiconductor device and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 4258US2025311242A1Memory device and operation method thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 4357US12082407B2Three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·19 claims
- 4457US2023422524A1Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 4556US2024215273A1Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 4656US2024215235A1Memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 4756US2024215271A1Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 4856US2024206181A1Memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 4956US2024206148A1Memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 5056US2024292629A1Three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
Showing the top 50 of 69 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →