Inventor · disambiguated record
Yu-Feng Yin
Also filed as: Yin yu-feng
20 granted patents·10 pending applications·13 citations·filing 2018–2025
90Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD30
Top patents by PatentIndex Score
30 records- 0196US10923573B2Forming metal contacts on metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 16, 2021·8 cites·20 claims
- 0288US10418453B2Forming metal contacts on metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 17, 2019·3 cites·20 claims
- 0386US12342598B2Forming metal contacts on metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 24, 2025·0 cites·20 claims
- 0482US11417832B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·1 cites·20 claims
- 0582US2025344404A1Bit-line resistance reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0681US12274181B2Magnetic tunnel junction device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 0780US11901426B2Forming metal contacts on metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 0880US2024381786A1Magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0977US2024379378A1Metal Contacts on Metal Gates and Methods ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1076US2024389465A1Interconnection for a memory array and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1175US12268097B2Top-interconnection metal lines for a memory array device and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims
- 1275US2024397829A1Semiconductor devices including magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1374US11532717B2Forming metal contacts on metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 1474US10755945B2Metal contacts on metal gates and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·1 cites·20 claims
- 1573US11856869B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 1672US2024099149A1Mram device structures and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1772US2024260480A1Low-resistance contact to top electrodes for memory cells and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1869US12133469B2Magnetic random access memory and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 29, 2024·0 cites·20 claims
- 1969US11665977B2Magnetic tunnel junction device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 30, 2023·0 cites·20 claims
- 2068US12245515B2Interconnection for a memory array and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 4, 2025·0 cites·20 claims
- 2168US11856854B2MRAM device structures and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 2264US11723284B2Top-interconnection metal lines for a memory array device and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 2363US11985906B2Low-resistance contact to top electrodes for memory cells and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 14, 2024·0 cites·20 claims
- 2462US2020388504A1Metal Contacts on Metal Gates and Methods ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Application pending·0 cites
- 2560US12219882B2Memory cell with low resistance top electrode contact and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 4, 2025·0 cites·20 claims
- 2660US2023157032A1Bit-line resistance reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2760US2025143191A1Memory cell with low resistance top electrode contact and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2858US11575043B1Semiconductor device and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 7, 2023·0 cites·20 claims
- 2956US11637203B2Semiconductor device and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·0 cites·20 claims
- 3049US11545619B2Memory device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 3, 2023·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →