Inventor · disambiguated record
Yves Mathieu Le Vaillant
Also filed as: LE VAILLANT YVES-MATHIEU · LE VAILLANT YVES-MATTHIEU
6 granted patents·2 pending applications·87 citations·filing 2003–2008
82Inventor score
Files withSOITEC SILICON ON INSULATOR5COMMISSARIAT ENERGIE ATOMIQUE1DAVAL NICOLAS1KERDILES SEBASTIEN1
Top patents by PatentIndex Score
8 records- 0188US7256075B2Recycling of a wafer comprising a multi-layer structure after taking-off a thin layerSOITEC SILICON ON INSULATOR·Filed 2005·Granted Aug 14, 2007·20 cites·30 claims
- 0287US7008859B2Wafer and method of producing a substrate by transfer of a layer that includes foreign speciesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2003·Granted Mar 7, 2006·33 cites·19 claims
- 0386US7187162B2Tools and methods for disuniting semiconductor wafersSOITEC SILICON ON INSULATOR·Filed 2003·Granted Mar 6, 2007·32 cites·29 claims
- 0463US7645684B2Wafer and method of producing a substrate by transfer of a layer that includes foreign speciesSOITEC SILICON ON INSULATOR·Filed 2008·Granted Jan 12, 2010·1 cites·18 claims
- 0562US7535115B2Wafer and method of producing a substrate by transfer of a layer that includes foreign speciesSOITEC SILICON ON INSULATOR·Filed 2005·Granted May 19, 2009·1 cites·16 claims
- 0650US7378729B2Recycling a wafer comprising a buffer layer, after having separated a thin layer therefromSOITEC SILICON ON INSULATOR·Filed 2005·Granted May 27, 2008·0 cites·20 claims
- 0740US2006197096A1Substrate with refractive index matchingKERDILES SEBASTIEN·Filed 2006·Application pending·0 cites
- 0836US2006270244A1Method of fabricating a structure with an oxide layer of a desired thickness on a Ge or SiGe substrateDAVAL NICOLAS·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →