Inventor · disambiguated record
Yves Morand
Also filed as: MORAND YVES
50 granted patents·6 pending applications·415 citations·filing 1998–2023
97Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE31ST MICROELECTRONICS SA11COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENE ALT2MORAND YVES2ST MICROELECTRONICS CROLLES 22
Top patents by PatentIndex Score
56 records- 0196US7598145B2Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germaniumCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Oct 6, 2009·53 cites·8 claims
- 0294US8470689B2Method for forming a multilayer structureDESPLOBAIN SEBASTIEN·Filed 2011·Granted Jun 25, 2013·202 cites·13 claims
- 0388US9117805B2Air-spacer MOS transistorST MICROELECTRONICS SA·Filed 2014·Granted Aug 25, 2015·11 cites·15 claims
- 0488US7829916B2Transistor with a germanium-based channel encased by a gate electrode and method for producing one such transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Nov 9, 2010·15 cites·18 claims
- 0584US9502558B2Local strain generation in an SOI substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Nov 22, 2016·4 cites·9 claims
- 0679US8962399B2Method of making a semiconductor layer having at least two different thicknessesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Feb 24, 2015·4 cites·18 claims
- 0777US9425051B2Method for producing a silicon-germanium film with variable germanium contentCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Aug 23, 2016·3 cites·15 claims
- 0875US10014183B2Method for patterning a thin filmCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Jul 3, 2018·2 cites·17 claims
- 0974US9935019B2Method of fabricating a transistor channel structure with uniaxial strainCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Apr 3, 2018·2 cites·10 claims
- 1073US7041539B2Method for making an island of material confined between electrodes, and application to transistorsST MICROELECTRONICS·Filed 2001·Granted May 9, 2006·22 cites·17 claims
- 1172US6521533B1Method for producing a copper connectionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2000·Granted Feb 18, 2003·28 cites·8 claims
- 1271US11121043B2Fabrication of transistors having stressed channelsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Sep 14, 2021·1 cites·21 claims
- 1371US10340361B2Forming of a MOS transistor based on a two-dimensional semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Jul 2, 2019·1 cites·9 claims
- 1471US9269570B2Contact on a heterogeneous semiconductor substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Feb 23, 2016·3 cites·17 claims
- 1570US9236478B2Method for manufacturing a fin MOS transistorST MICROELECTRONICS SA·Filed 2014·Granted Jan 12, 2016·2 cites·25 claims
- 1670US7972971B2Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germaniumCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Jul 5, 2011·3 cites·20 claims
- 1768US9899217B2Method for producing a strained semiconductor on insulator substrateCOMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENE ALT·Filed 2014·Granted Feb 20, 2018·2 cites·22 claims
- 1866US7361592B2Method for producing a component comprising at least one germanium-based element and component obtained by such a methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Apr 22, 2008·3 cites·10 claims
- 1965US9536951B2FinFET transistor comprising portions of SiGe with a crystal orientation [111]COMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Jan 3, 2017·1 cites·14 claims
- 2064US9911820B2Method for fabrication of a field-effect with reduced stray capacitanceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Mar 6, 2018·1 cites·14 claims
- 2164US9711567B2Process for fabricating an integrated circuit cointegrating a FET transistor and an OxRAM memory locationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Jul 18, 2017·1 cites·14 claims
- 2263US9276073B2Nanowire and planar transistors co-integrated on utbox SOI substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Mar 1, 2016·1 cites·13 claims
- 2363US8575011B2Method of fabricating a device with a concentration gradient and the corresponding deviceBENSAHEL DANIEL-CAMILLE·Filed 2008·Granted Nov 5, 2013·2 cites·14 claims
- 2462US8722471B2Method for forming a via contacting several levels of semiconductor layersST MICROELECTRONICS SA·Filed 2013·Granted May 13, 2014·1 cites·8 claims
- 2562US7141837B2High-density MOS transistorST MICROELECTRONICS SA·Filed 2004·Granted Nov 28, 2006·10 cites·19 claims
- 2660US6734483B2Process for fabricating a capacitor within an integrated circuit, and corresponding integrated circuitST MICROELECTRONICS SA·Filed 2001·Granted May 11, 2004·10 cites·18 claims
- 2759US8178426B2Method for manufacturing a structure of semiconductor-on-insulator typeHALIMAOUI AOMAR·Filed 2008·Granted May 15, 2012·2 cites·27 claims
- 2858US6875686B2Method for fabricating a structure of interconnections comprising an electric insulation including air or vacuum gapsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2000·Granted Apr 5, 2005·13 cites·10 claims
- 2957US7625811B2Method for producing distinct first and second active semi-conducting zones and use thereof for fabricating C-MOS structuresCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Dec 1, 2009·1 cites·14 claims
- 3057US7129563B2Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity materialST MICROELECTRONICS SA·Filed 2004·Granted Oct 31, 2006·8 cites·7 claims
- 3156US8895420B2Method of fabricating a device with a concentration gradient and the corresponding deviceST MICROELECTRONICS CROLLES 2·Filed 2013·Granted Nov 25, 2014·0 cites·19 claims
- 3255US9240325B2Method for making an integrated circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Jan 19, 2016·0 cites·15 claims
- 3355US8247313B2Method for preparing a germanium layer from a silicon-germanium-on-isolator substrateVINCENT BENJAMIN·Filed 2008·Granted Aug 21, 2012·1 cites·13 claims
- 3451US9425255B2Nanowire and planar transistors co-integrated on utbox SOI substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Aug 23, 2016·0 cites·5 claims
- 3551US2014370668A1Method of making a transitorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Application pending·0 cites
- 3651US2024389475A1Making a quantum device with an embedding josephson junctionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Application pending·0 cites
- 3750US9673329B2Method for manufacturing a fin MOS transistorST MICROELECTRONICS SA·Filed 2015·Granted Jun 6, 2017·0 cites·12 claims
- 3849US11239347B2Method for making a transistor of which the active region includes a semimetal materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Feb 1, 2022·0 cites·13 claims
- 3947US9978602B2Method of making a transistorCOMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENE ALT·Filed 2015·Granted May 22, 2018·0 cites·26 claims
- 4046US2016099326A1Method for making an integrated circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Application pending·0 cites
- 4144US8486514B2Method to fabricate a mould for lithography by nano-imprintingLANDIS STEFAN·Filed 2010·Granted Jul 16, 2013·0 cites·11 claims
- 4244US2023069862A1Method for manufacturing an integrated circuitCOMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2022·Application pending·0 cites
- 4343US8980702B2Method of making a transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Mar 17, 2015·0 cites·32 claims
- 4443US8822332B2Method for forming gate, source, and drain contacts on a MOS transistorST MICROELECTRONICS SA·Filed 2013·Granted Sep 2, 2014·0 cites·12 claims
- 4542US9911827B2SBFET transistor and corresponding fabrication processCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Mar 6, 2018·0 cites·14 claims
- 4641US9831319B2Transistor with MIS connections and fabricating processCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Nov 28, 2017·0 cites·14 claims
- 4741US2015091089A1Air-spacer mos transistorST MICROELECTRONICS CROLLES 2·Filed 2014·Application pending·0 cites
- 4839US8598038B2Process for producing two interleaved patterns on a substrateMORAND YVES·Filed 2011·Granted Dec 3, 2013·0 cites·17 claims
- 4938US7381267B2Heteroatomic single-crystal layersST MICROELECTRONICS SA·Filed 2004·Granted Jun 3, 2008·0 cites·7 claims
- 5037US10658197B2Method for producing low-permittivity spacersCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted May 19, 2020·0 cites·30 claims
Showing the top 50 of 56 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →