Inventor · disambiguated record
Zhiyuan Cheng
Also filed as: CHENG ZHIYUAN
36 granted patents·6 pending applications·869 citations·filing 2002–2024
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG13TAIWAN SEMICONDUCTOR MFG CO LTD7CHENG ZHIYUAN6AMBERWAVE SYSTEMS CORP5MASSACHUSETTS INST TECHNOLOGY4
Top patents by PatentIndex Score
42 records- 0199US7875958B2Quantum tunneling devices and circuits with lattice-mismatched semiconductor structuresTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jan 25, 2011·123 cites·19 claims
- 0298US8629477B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 14, 2014·35 cites·20 claims
- 0398US8324660B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationLOCHTEFELD ANTHONY J·Filed 2010·Granted Dec 4, 2012·85 cites·24 claims
- 0498US8274097B2Reduction of edge effects from aspect ratio trappingCHENG ZHIYUAN·Filed 2009·Granted Sep 25, 2012·70 cites·15 claims
- 0598US7638842B2Lattice-mismatched semiconductor structures on insulatorsAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Dec 29, 2009·81 cites·41 claims
- 0697US8384196B2Formation of devices by epitaxial layer overgrowthTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Feb 26, 2013·39 cites·16 claims
- 0797US8216951B2Quantum tunneling devices and circuits with lattice-mismatched semiconductor structuresCHENG ZHIYUAN·Filed 2010·Granted Jul 10, 2012·27 cites·13 claims
- 0897US8034697B2Formation of devices by epitaxial layer overgrowthTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Oct 11, 2011·76 cites·28 claims
- 0996US8796734B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 5, 2014·16 cites·20 claims
- 1096US8519436B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Aug 27, 2013·17 cites·20 claims
- 1196US8253211B2Semiconductor sensor structures with reduced dislocation defect densitiesCHENG ZHIYUAN·Filed 2009·Granted Aug 28, 2012·36 cites·15 claims
- 1295US7348259B2Method of fabricating a semiconductor structure that includes transferring one or more material layers to a substrate and smoothing an exposed surface of at least one of the material layersMASSACHUSETTS INST TECHNOLOGY·Filed 2005·Granted Mar 25, 2008·27 cites·8 claims
- 1394US8860160B2Quantum tunneling devices and circuits with lattice-mismatched semiconductor structuresTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 14, 2014·10 cites·20 claims
- 1494US6940089B2Semiconductor device structureMASSACHUSETTS INST TECHNOLOGY·Filed 2002·Granted Sep 6, 2005·62 cites·16 claims
- 1593US9431243B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 30, 2016·5 cites·21 claims
- 1693US8629047B2Quantum tunneling devices and circuits with lattice-mismatched semiconductor structuresCHENG ZHIYUAN·Filed 2012·Granted Jan 14, 2014·10 cites·20 claims
- 1792US7304336B2FinFET structure and method to make the sameMASSACHUSETTS INST TECHNOLOGY·Filed 2004·Granted Dec 4, 2007·59 cites·16 claims
- 1891US8329541B2InP-based transistor fabricationYE PEIDE·Filed 2008·Granted Dec 11, 2012·34 cites·16 claims
- 1990US10680126B2Photovoltaics on siliconTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 9, 2020·4 cites·20 claims
- 2090US7390701B2Method of forming a digitalized semiconductor structureMASSACHUSETTS INST TECHNOLOGY·Filed 2005·Granted Jun 24, 2008·16 cites·20 claims
- 2189US9559712B2Quantum tunneling devices and circuits with lattice-mismatched semiconductor structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·4 cites·17 claims
- 2289US9508890B2Photovoltaics on siliconLI JIZHONG·Filed 2008·Granted Nov 29, 2016·14 cites·25 claims
- 2389US8629045B2Reduction of edge effects from aspect ratio trappingCHENG ZHIYUAN·Filed 2012·Granted Jan 14, 2014·6 cites·17 claims
- 2487US9219112B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Dec 22, 2015·3 cites·21 claims
- 2587US9105522B2Quantum tunneling devices and circuits with lattice-mismatched semiconductor structuresTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Aug 11, 2015·4 cites·20 claims
- 2685US8987028B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 24, 2015·3 cites·20 claims
- 2773US9780190B2InP-based transistor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Oct 3, 2017·2 cites·20 claims
- 2872US9356103B2Reduction of edge effects from aspect ratio trappingTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 31, 2016·1 cites·20 claims
- 2960US9105549B2Semiconductor sensor structures with reduced dislocation defect densitiesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Aug 11, 2015·0 cites·20 claims
- 3059US9640395B2Reduction of edge effects from aspect ratio trappingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 2, 2017·0 cites·20 claims
- 3159US8994070B2Reduction of edge effects from aspect ratio trappingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 31, 2015·0 cites·20 claims
- 3257US10541315B2INP-based transistor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 21, 2020·0 cites·20 claims
- 3357US9455299B2Methods for semiconductor sensor structures with reduced dislocation defect densitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 27, 2016·0 cites·20 claims
- 3456US8809106B2Method for semiconductor sensor structures with reduced dislocation defect densitiesCHENG ZHIYUAN·Filed 2012·Granted Aug 19, 2014·0 cites·20 claims
- 3554US12234617B1Construction method for flood storage area ecological wetland oriented to multi-target collaborative promotionANHUI SURVEY & DESIGN INST OF WATER RESOURCES & HYDROPOWER CO LTD·Filed 2024·Granted Feb 25, 2025·0 cites·5 claims
- 3643US2025008279A1Hearing aid control method, and hearing aid device and storage mediumBEIJING LLVISION TECH CO LTD·Filed 2022·Application pending·0 cites
- 3743US2007267722A1Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationAMBERWAVE SYSTEMS CORP·Filed 2006·Application pending·0 cites
- 3842US2007054467A1Methods for integrating lattice-mismatched semiconductor structure on insulatorsAMBERWAVE SYSTEMS CORP·Filed 2005·Application pending·0 cites
- 3942US2006292719A1Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationAMBERWAVE SYSTEMS CORP·Filed 2006·Application pending·0 cites
- 4040US2004245571A1Semiconductor-on-insulator article and method of making sameFiled 2004·Application pending·0 cites
- 4139US2006131606A1Lattice-mismatched semiconductor structures employing seed layers and related fabrication methodsAMBERWAVE SYSTEMS CORP·Filed 2005·Application pending·0 cites
- 4237US11306377B2High strength, high toughness, heat-cracking resistant bainite steel wheel for rail transportation and manufacturing method thereofNMAGANG GROUP HOLDING CO LTD·Filed 2017·Granted Apr 19, 2022·0 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →