Inventor · disambiguated record
Zhongshan Hong
Also filed as: HONG ZHONGSHAN
57 granted patents·2 pending applications·81 citations·filing 2006–2019
98Inventor score
Files withSEMICONDUCTOR MFG INT SHANGHAI CORP18SEMICONDUCTOR MFG INT SHANGHAI13HONG ZHONGSHAN9SEMICONDUCTOR MFG INT CORP7SEMICONDUCTOR MFG INT BEIJING CORP5
Top patents by PatentIndex Score
59 records- 0186US9876079B2Nanowire device and method of manufacturing the sameSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2017·Granted Jan 23, 2018·3 cites·7 claims
- 0286US9463975B2MEMS capacitive pressure sensorsSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Oct 11, 2016·3 cites·11 claims
- 0385US9472422B2Semiconductor device structure and manufacturing methodsSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2015·Granted Oct 18, 2016·4 cites·20 claims
- 0483US9206030B2MEMS capacitive pressure sensors and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Dec 8, 2015·3 cites·9 claims
- 0582US9984882B2Semiconductor structures and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted May 29, 2018·3 cites·19 claims
- 0682US8975167B2Semiconductor device and manufacturing methodHONG ZHONGSHAN·Filed 2012·Granted Mar 10, 2015·5 cites·12 claims
- 0780US9514881B2Semiconductor structure and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Dec 6, 2016·3 cites·13 claims
- 0878US9738508B2MEMS capacitive pressure sensorsSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Aug 22, 2017·2 cites·12 claims
- 0978US9029212B2MEMS pressure sensors and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted May 12, 2015·3 cites·8 claims
- 1077US8435900B2Method for manufacturing a transistorSHAO QUN·Filed 2011·Granted May 7, 2013·5 cites·13 claims
- 1176US9034762B2Triple patterning methodSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted May 19, 2015·3 cites·16 claims
- 1275US8828868B2Method for forming hard mask in semiconductor device fabricationHONG ZHONGSHAN·Filed 2011·Granted Sep 9, 2014·3 cites·18 claims
- 1375US8575024B2Semiconductor device having air gap and method for manufacturing the sameLI FAN·Filed 2011·Granted Nov 5, 2013·4 cites·13 claims
- 1474US9362276B2Semiconductor device and fabrication methodSEMICONDUCTOR MFG INT SHANGHAI·Filed 2015·Granted Jun 7, 2016·2 cites·19 claims
- 1573US9812442B2Integrated semiconductor device and manufacturing method thereforHONG ZHONGSHAN·Filed 2012·Granted Nov 7, 2017·3 cites·14 claims
- 1673US9614038B2Nanowire device and method of manufacturing the sameSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2014·Granted Apr 4, 2017·2 cites·11 claims
- 1772US10340274B2LDMOS FinFET deviceSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2017·Granted Jul 2, 2019·1 cites·20 claims
- 1872US9293472B2RF SOI switch with backside cavity and the method to form itSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Mar 22, 2016·2 cites·14 claims
- 1970US8895389B2Semiconductor structures and fabrication method thereofSEMICONDUCTOR MFG INT CORP·Filed 2013·Granted Nov 25, 2014·2 cites·11 claims
- 2070US8802523B2CMOS device and fabrication methodHONG ZHONGSHAN·Filed 2012·Granted Aug 12, 2014·2 cites·16 claims
- 2169US9548359B2Methods for forming vertical semiconductor pillarsSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2015·Granted Jan 17, 2017·1 cites·11 claims
- 2268US9490210B2Electrical interconnection structure and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Nov 8, 2016·1 cites·18 claims
- 2368US9093419B2Semiconductor device containing MIM capacitor and fabrication methodSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Jul 28, 2015·2 cites·16 claims
- 2468US8728926B2Semiconductor device and method for manufacturing a semiconductor deviceSEMICONDUCTOR MFG INT CORP·Filed 2012·Granted May 20, 2014·2 cites·15 claims
- 2567US9293469B2Flash memory and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Mar 22, 2016·1 cites·14 claims
- 2667US8610175B2Semiconductor device and manufacturing method thereofHONG ZHONGSHAN·Filed 2011·Granted Dec 17, 2013·2 cites·19 claims
- 2767US7645667B2Two-step self-aligned source etch with large process windowSEMICONDUCTOR MFG INT SHANGHAI·Filed 2006·Granted Jan 12, 2010·2 cites·23 claims
- 2866US9525022B2MIM capacitorSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Dec 20, 2016·1 cites·8 claims
- 2966US8349675B2Method for forming a gate electrodeSEMICONDUCTOR MFG INT CORP·Filed 2011·Granted Jan 8, 2013·2 cites·13 claims
- 3065US9178062B2MOS transistor, fabrication method thereof, and SRAM memory cell circuitSEMICONDUCTOR MFG INT CORP·Filed 2013·Granted Nov 3, 2015·2 cites·19 claims
- 3165US9105632B2Semiconductor structuresSEMICONDUCTOR MFG INT CORP·Filed 2014·Granted Aug 11, 2015·1 cites·12 claims
- 3263US9236296B2Fabrication method for MIM capacitorSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Jan 12, 2016·1 cites·15 claims
- 3362US8956883B1Magnetic tunnel junctions and fabrication method thereofSEMICONDUCTOR MFG INT BEIJING·Filed 2014·Granted Feb 17, 2015·2 cites·15 claims
- 3462US7995165B2LCOS display unit and method for forming the sameSEMICONDUCTOR MFG INT SHANGHAI·Filed 2007·Granted Aug 9, 2011·2 cites·4 claims
- 3560US8563432B2Method for forming through silicon via structureHONG ZHONGSHAN·Filed 2011·Granted Oct 22, 2013·1 cites·12 claims
- 3658US10622358B2LDMOS FinFET deviceSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2019·Granted Apr 14, 2020·0 cites·7 claims
- 3755US9831308B2Semiconductor device having vertical semiconductor pillarsSEMICONDUCTOR MFG INTERNATIONAL (BEIJING) CORPORATION·Filed 2016·Granted Nov 28, 2017·0 cites·8 claims
- 3855US9761528B2Interconnection structureSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Sep 12, 2017·0 cites·16 claims
- 3955US7919810B2Device with polymer layers and two-step self-aligned source etch with large process windowSEMICONDUCTOR MFG INT SHANGHAI·Filed 2009·Granted Apr 5, 2011·0 cites·5 claims
- 4054US9716007B2Semiconductor structure including patterned featureSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Jul 25, 2017·0 cites·9 claims
- 4154US9401368B2Memory device and method for forming the sameSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2014·Granted Jul 26, 2016·0 cites·20 claims
- 4253US10128231B2Integrated semiconductor device and manufacturing method thereforSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2017·Granted Nov 13, 2018·0 cites·12 claims
- 4352US9570452B2Flash memorySEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Feb 14, 2017·0 cites·12 claims
- 4452US9117907B2Semiconductor deviceSEMICONDUCTOR MFG INT CORP·Filed 2015·Granted Aug 25, 2015·0 cites·8 claims
- 4551US9640479B2Method for fabricating semiconductor structureSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted May 2, 2017·0 cites·20 claims
- 4650US9443742B2Patterned feature and multiple patterning method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Sep 13, 2016·0 cites·17 claims
- 4750US2017358676A1Semiconductor deviceSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2017·Application pending·0 cites
- 4849US9570453B2Memory deviceSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Feb 14, 2017·0 cites·10 claims
- 4949US9466573B2RF SOI switch with backside cavity and the method to form itSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Oct 11, 2016·0 cites·5 claims
- 5048US10418454B2Semiconductor device and manufacturing method thereforSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2018·Granted Sep 17, 2019·0 cites·20 claims
Showing the top 50 of 59 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →