Inventor · disambiguated record
Zheng-Jun Lin
Also filed as: LIN ZHENG-JUN
27 granted patents·11 pending applications·20 citations·filing 2019–2025
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD38
Top patents by PatentIndex Score
38 records- 0193US11348638B2Memory sense amplifier with prechargeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·3 cites·20 claims
- 0292US11984162B2Hybrid self-tracking reference circuit for RRAM cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·2 cites·20 claims
- 0390US10755780B2Memory sense amplifier with prechargeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 25, 2020·9 cites·20 claims
- 0483US12131776B2Non-volatile memory based compute-in-memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 29, 2024·1 cites·20 claims
- 0583US2025292831A1Resistive memory with low voltage operationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0682US11636896B2Memory cell array circuit and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 25, 2023·1 cites·20 claims
- 0782US2025095734A1Memory cell array circuit and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0882US2025273266A1Rram circuit operating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0981US10930344B2RRAM circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·4 cites·20 claims
- 1080US12322442B2Resistive memory with low voltage operationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
- 1178US12308073B2RRAM circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 20, 2025·0 cites·20 claims
- 1278US12165705B2Memory cell array circuit and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 1377US12230323B2Memory cell array circuit and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 1476US12283317B2Memory sense amplifier with prechargeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 22, 2025·0 cites·20 claims
- 1576US2025190306A1Semiconductor device and operating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1675US12315562B2RRAM circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 1774US12259783B2Semiconductor device and operation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·20 claims
- 1874US11735263B2Memory cell array circuit and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
- 1974US2025191653A1Novel dynamic inhibit voltage to reduce write power for random-access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2073US12230320B2Dynamic inhibit voltage to reduce write power for random-access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 2173US12027205B2Resistive memory with low voltage operationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 2273US11942150B2RRAM circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·0 cites·20 claims
- 2373US2025208641A1Low-dropout (ldo) regulator with a feedback circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2470US12248331B2Low-dropout (LDO) regulator with a feedback circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 11, 2025·0 cites·20 claims
- 2570US11837287B2Memory sense amplifier with prechargeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 5, 2023·0 cites·20 claims
- 2669US11715518B2Dynamic inhibit voltage to reduce write power for random-access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 1, 2023·0 cites·9 claims
- 2769US2024379155A1Non-volatile memory based compute-in-memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2868US12014776B2RRAM circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 2968US11609815B1Semicoductor device and operation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 21, 2023·0 cites·20 claims
- 3068US2024257870A1Hybrid self-tracking reference circuit for rram cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3165US11527285B2RRAM current limiting methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·0 cites·20 claims
- 3263US11393528B2RRAM circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 19, 2022·0 cites·20 claims
- 3352US2024411334A1Voltage regulators with shared decoupling capacitor for memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3452US2025342882A1Voltage control circuits and methods for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3551US2025246228A1Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3650US11442482B2Low-dropout (LDO) regulator with a feedback circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·0 cites·20 claims
- 3750US10950303B2RRAM current limiting circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·0 cites·20 claims
- 3845US11495294B2Hybrid self-tracking reference circuit for RRAM cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →