Inventor · disambiguated record
Zheng Lu
Also filed as: LU ZHENG · LU ZHENG-HONG
33 granted patents·19 pending applications·118 citations·filing 2001–2024
96Inventor score
Files withGLOBALWAFERS CO LTD12MEMC ELECTRONIC MATERIALS8OTI LUMIONICS INC7LU ZHENG HONG6GLOBAL WAFERS CO LTD3
Top patents by PatentIndex Score
52 records- 0192US10439081B2Method for depositing a conductive coating on a surfaceOTI LUMIONICS INC·Filed 2013·Granted Oct 8, 2019·4 cites·24 claims
- 0292US8742152B2Preparation of metal-catecholate frameworksYAGHI OMAR M·Filed 2012·Granted Jun 3, 2014·17 cites·11 claims
- 0391US11532763B2Method for depositing a conductive coating on a surfaceOTI LUMIONICS INC·Filed 2021·Granted Dec 20, 2022·1 cites·18 claims
- 0489US10597413B2Silicone-compatible compoundsHenkel IP & Holding GmbH·Filed 2018·Granted Mar 24, 2020·6 cites·28 claims
- 0584US8853070B2Functionalization of a substrateHELANDER MICHAEL·Filed 2012·Granted Oct 7, 2014·5 cites·30 claims
- 0682US11764320B2Method for depositing a conductive coating on a surfaceOTI LUMIONICS INC·Filed 2022·Granted Sep 19, 2023·0 cites·14 claims
- 0782US7611580B2Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic fieldMEMC ELECTRONIC MATERIALS·Filed 2007·Granted Nov 3, 2009·4 cites·20 claims
- 0880US12398487B2Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and sizeGLOBALWAFERS CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·15 claims
- 0980US11145771B2Method for depositing a conductive coating on a surfaceOTI LUMIONICS INC·Filed 2019·Granted Oct 12, 2021·0 cites·11 claims
- 1078US9045387B2Oxidative homo-coupling reactions of aryl boronic acids using a porous copper metal-organic framework as a highly efficient heterogeneous catalystYAGHI OMAR M·Filed 2010·Granted Jun 2, 2015·2 cites·19 claims
- 1177US11111602B2Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and sizeSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2015·Granted Sep 7, 2021·2 cites·9 claims
- 1277US6554898B2Crystal puller for growing monocrystalline silicon ingotsMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Apr 29, 2003·14 cites·8 claims
- 1376US7358538B2Organic light-emitting devices with multiple hole injection layers containing fullereneLU ZHENG-HONG·Filed 2005·Granted Apr 15, 2008·15 cites·28 claims
- 1475US2025129512A1Methods for determining suitability of czochralski growth conditions for producing substrates for epitaxyGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 1570US11753741B2Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and sizeGLOBALWAFERS CO LTD·Filed 2021·Granted Sep 12, 2023·0 cites·10 claims
- 1669US2025011968A1Methods for determining suitability of silicon substrates for epitaxyGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 1768US7125450B2Process for preparing single crystal silicon using crucible rotation to control temperature gradientMEMC ELECTRONIC MATERIALS·Filed 2003·Granted Oct 24, 2006·14 cites·75 claims
- 1867US9698386B2Functionalization of a substrateOTI LUMIONICS INC·Filed 2013·Granted Jul 4, 2017·1 cites·16 claims
- 1967US2025305181A1Ingot puller apparatus including cooling jacket with varying surface emissivity for controlled ingot cooling profilesGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 2067US2025305180A1Ingot puller apparatus including moveable cooling jacket for controlled ingot cooling profilesGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 2166US11623903B2Alkane dehydrogenation catalyst and methods of converting alkanes to alkenesUCHICAGO ARGONNE LLC·Filed 2021·Granted Apr 11, 2023·0 cites·14 claims
- 2266US7223304B2Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic fieldMEMC ELECTRONIC MATERIALS·Filed 2004·Granted May 29, 2007·10 cites·31 claims
- 2366US6663709B2Crystal puller and method for growing monocrystalline silicon ingotsMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Dec 16, 2003·6 cites·11 claims
- 2465US12428750B2Ingot puller apparatus having silicon feed tubes with kick platesGLOBALWAFERS CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·9 claims
- 2565US12227874B2Methods for determining suitability of Czochralski growth conditions for producing substrates for epitaxyGLOBALWAFERS CO LTD·Filed 2022·Granted Feb 18, 2025·0 cites·12 claims
- 2665US9139917B2Transparent conductive porous nanocomposites and methods of fabrication thereofO'BRIEN PAUL GREGORY·Filed 2010·Granted Sep 22, 2015·1 cites·17 claims
- 2764US2025185522A1Electrode with surface quantum states and applications thereofLAKESIDE LIGHTNING SEMICONDUCTOR JIANGSU CO·Filed 2024·Application pending·0 cites
- 2863US7521113B2Light-emitting devices with fullerene layerLU ZHENG-HONG·Filed 2004·Granted Apr 21, 2009·11 cites·27 claims
- 2962US12152314B2Methods for determining suitability of silicon substrates for epitaxyGLOBALWAFERS CO LTD·Filed 2022·Granted Nov 26, 2024·0 cites·11 claims
- 3061US2025129106A1Use of Chlorine-Free Catalyst in the Preparation of DiisopropylaminosilaneJIANGSU NATA OPTO ELECT MAT CO LTD·Filed 2022·Application pending·0 cites
- 3160US6960254B2Method to monitor and control the crystal cooling or quenching rate by measuring crystal surface temperatureMEMC ELECTRONIC MATERIALS·Filed 2003·Granted Nov 1, 2005·4 cites·23 claims
- 3257US10988859B2Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and sizeSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2018·Granted Apr 27, 2021·0 cites·8 claims
- 3355US9853233B2Functionalization of a substrateOTI LUMIONICS INC·Filed 2014·Granted Dec 26, 2017·0 cites·8 claims
- 3454US10290833B2Functionalization of a substrateOTI LUMIONICS INC·Filed 2017·Granted May 14, 2019·0 cites·16 claims
- 3554US2023304893A1Systems and methods for determining mechanical wear in a crystal pullerGLOBALWAFERS CO LTD·Filed 2023·Application pending·0 cites
- 3652US12018400B2Methods and systems of capturing transient thermal responses of regions of crystal pullersGLOBALWAFERS CO LTD·Filed 2022·Granted Jun 25, 2024·0 cites·8 claims
- 3751US7573587B1Method and device for continuously measuring silicon island elevationMEMC ELECTRONIC MATERIALS·Filed 2008·Granted Aug 11, 2009·1 cites·13 claims
- 3848US9050589B2Alkene aziridinationUNIV TENNESSEE RES FOUNDATION·Filed 2013·Granted Jun 9, 2015·0 cites·16 claims
- 3945US11959189B2Process for preparing ingot having reduced distortion at late body lengthGLOBALWAFERS CO LTD·Filed 2020·Granted Apr 16, 2024·0 cites·22 claims
- 4045US2020194691A1Emissive hosts doped with non-emissive triplet materials for organic electroluminescent devicesLU ZHENG HONG·Filed 2019·Application pending·0 cites
- 4144US10818865B2Multiple hole injection structure on oxidized aluminum and applications thereof in organic luminescent devicesLAKESIDE PHOTOELECTRONIC TECH JIANGSU CO·Filed 2019·Granted Oct 27, 2020·0 cites·17 claims
- 4242US2020002840A1Systems for producing a monocrystalline ingot that involve monitoring neck growth moving averageGLOBAL WAFERS CO LTD·Filed 2018·Application pending·0 cites
- 4342US2020002839A1Monitoring a moving average of the ingot neck pull rate to control the quality of the neck for ingot growthGLOBAL WAFERS CO LTD·Filed 2018·Application pending·0 cites
- 4442US2020002838A1Methods for producing a silicon ingot that involve monitoring a moving average of the ingot neck pull rateGLOBAL WAFERS CO LTD·Filed 2018·Application pending·0 cites
- 4540US2006099448A1Top light-emitting devices with fullerene layerLU ZHENG-HONG·Filed 2005·Application pending·0 cites
- 4640US2004245917A1Light-emitting devices with an embedded charge injection electrodeFiled 2004·Application pending·0 cites
- 4739US2003196587A1Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleationMEMC ELECTRONIC MATERIALS·Filed 2003·Application pending·0 cites
- 4837US2019315891A1Thioxanthone derivative photoinitiatorHenkel IP & Holding GmbH·Filed 2019·Application pending·0 cites
- 4935US2006036114A1Organoboron luminescent compounds and methods of making and using sameWANG SUNING·Filed 2005·Application pending·0 cites
- 5035US2009058262A1Alkaline fluoride dope molecular films and applications for p-n junction and field-effect transistorLU ZHENG-HONG·Filed 2005·Application pending·0 cites
Showing the top 50 of 52 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →