Inventor · disambiguated record
Zheng-Yang Pan
Also filed as: Pan Zheng-Yang
36 granted patents·11 pending applications·73 citations·filing 2015–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD47
Top patents by PatentIndex Score
47 records- 0196US9847334B1Structure and formation method of semiconductor device with channel layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 19, 2017·17 cites·20 claims
- 0295US9899273B1Semiconductor structure with dopants diffuse protection and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·13 cites·20 claims
- 0394US11901442B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·2 cites·20 claims
- 0494US10879126B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·7 cites·20 claims
- 0593US10535736B2Fully strained channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 14, 2020·6 cites·20 claims
- 0693US10269646B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·7 cites·20 claims
- 0790US11011433B2NMOS and PMOS transistor gates with hafnium oxide layers and lanthanum oxide layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 18, 2021·2 cites·20 claims
- 0890US10164100B2Formation method and structure semiconductor device with source/drain structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·4 cites·20 claims
- 0986US10629496B2Methods for forming transistor gates with hafnium oxide layers and lanthanum oxide layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 21, 2020·3 cites·20 claims
- 1084US2024371941A1Fully strained channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1183US11233123B2Fully strained channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·1 cites·20 claims
- 1282US10879396B2Semiconductor device with source/drain structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 29, 2020·1 cites·20 claims
- 1382US10867799B2FinFET device and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·2 cites·20 claims
- 1482US10490661B2Dopant concentration boost in epitaxially formed materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 26, 2019·2 cites·20 claims
- 1581US10026840B2Structure of semiconductor device with source/drain structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 17, 2018·2 cites·20 claims
- 1681US2025351543A1Transistor isolation regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1781US2025366097A1Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1880US12308369B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 20, 2025·0 cites·20 claims
- 1979US10672886B2Structure and method for high-k metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 2, 2020·2 cites·20 claims
- 2078US12080761B2Fully strained channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 3, 2024·0 cites·20 claims
- 2177US2025254901A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2276US2024363442A1NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lanthanum Oxide LayersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2375US10734524B2Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·1 cites·20 claims
- 2475US2024014321A1Dopant Concentration Boost in Epitaxially Formed MaterialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2574US2024379450A1Transistor isolation regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2673US10347764B2Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 9, 2019·1 cites·20 claims
- 2772US2024395631A1Semiconductor device and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2871US11776851B2Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
- 2971US11646231B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 9, 2023·0 cites·20 claims
- 3068US12266573B2Transistor isolation regions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 1, 2025·0 cites·20 claims
- 3168US12057351B2Semiconductor device and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·0 cites·20 claims
- 3268US2025081549A1Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3367US12107015B2NMOS and PMOS transistor gates with hafnium oxide layers and lanthanum oxide layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 1, 2024·0 cites·20 claims
- 3466US11342228B2Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·0 cites·20 claims
- 3565US11721760B2Dopant concentration boost in epitaxially formed materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 8, 2023·0 cites·20 claims
- 3665US11171220B2Structure and method for high-K metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 9, 2021·0 cites·20 claims
- 3763US10636909B2Formation method of semiconductor device with source/drain structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 28, 2020·0 cites·20 claims
- 3857US10522358B2FinFET device and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·0 cites·20 claims
- 3957US2023253254A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4056US2025098259A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4154US11677015B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 13, 2023·0 cites·20 claims
- 4247US10879124B2Method to form a fully strained channel regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 29, 2020·0 cites·20 claims
- 4346US9917189B2Method for detecting presence and location of defects in a substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 13, 2018·0 cites·20 claims
- 4444US10879240B2Fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 29, 2020·0 cites·20 claims
- 4544US10043665B2Formation method of semiconductor device structure with semiconductor nanowireTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 7, 2018·0 cites·20 claims
- 4641US9721826B1Wafer supporting structure, and device and method for manufacturing semiconductorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 1, 2017·0 cites·20 claims
- 4739US11152362B2Fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 19, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →