Inventor · disambiguated record
Zhongjian Teng
Also filed as: TENG ZHONGJIAN
26 granted patents·1 pending application·116 citations·filing 2012–2025
94Inventor score
Top patents by PatentIndex Score
27 records- 0198US10069064B1Memory structure having a magnetic tunnel junction (MTJ) self-aligned to a T-shaped bottom electrode, and method of manufacturing the sameHEADWAY TECH INC·Filed 2017·Granted Sep 4, 2018·59 cites·24 claims
- 0295US11527711B2MTJ device performance by controlling device shapeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·2 cites·20 claims
- 0395US10520818B1Critical dimension (CD) uniformity of photoresist island patterns using alternating phase shifting maskTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·5 cites·21 claims
- 0494US9972777B1MTJ device process/integration method with pre-patterned seed layerHEADWAY TECH INC·Filed 2017·Granted May 15, 2018·11 cites·18 claims
- 0590US8524511B1Method to connect a magnetic device to a CMOS transistorZHONG TOM·Filed 2012·Granted Sep 3, 2013·13 cites·20 claims
- 0689US10714679B2CMP stop layer and sacrifice layer for high yield small size MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·5 cites·20 claims
- 0789US10103322B1Method to remove sidewall damage after MTJ etchingHEADWAY TECH INC·Filed 2017·Granted Oct 16, 2018·5 cites·20 claims
- 0887US11088320B2Fabrication of large height top metal electrode for sub-60nm magnetoresistive random access memory (MRAM) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·3 cites·20 claims
- 0986US11430945B2MTJ device performance by adding stress modulation layer to MTJ device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 30, 2022·4 cites·20 claims
- 1085US12207566B2MTJ device performance by adding stress modulation layer to MTJ device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
- 1185US10944049B2MTJ device performance by controlling device shapeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 9, 2021·2 cites·16 claims
- 1285US10475991B2Fabrication of large height top metal electrode for sub-60nm magnetoresistive random access memory (MRAM) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 12, 2019·3 cites·21 claims
- 1383US12402539B2STT-MRAM heat sink and magnetic shield structure design for more robust read/write performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 1482US11785864B2MTJ device performance by adding stress modulation layer to mtj device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·0 cites·19 claims
- 1578US10854809B2STT-MRAM heat sink and magnetic shield structure design for more robust read/write performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 1, 2020·1 cites·20 claims
- 1678US2025169373A1Mtj device performance by adding stress modulation layer to mtj device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1777US11963457B2MTJ device performance by controlling device shapeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 1875US10475987B1Method for fabricating a magnetic tunneling junction (MTJ) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 12, 2019·2 cites·15 claims
- 1972US12310245B2Etching and encapsulation scheme for magnetic tunnel junction fabricationHEADWAY TECH INC·Filed 2023·Granted May 20, 2025·0 cites·8 claims
- 2071US11723286B2STT-MRAM heat sink and magnetic shield structure design for more robust read/write performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 8, 2023·0 cites·20 claims
- 2171US10680168B2Ion beam etching fabricated sub 30nm vias to reduce conductive material re-deposition for sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·1 cites·20 claims
- 2270US11573494B2Critical dimension (CD) uniformity of photoresist island patterns using alternating phase shifting maskTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 7, 2023·0 cites·20 claims
- 2370US11217746B2Ion beam etching fabricated sub 30nm Vias to reduce conductive material re-deposition for sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 4, 2022·0 cites·20 claims
- 2469US10831104B2Critical dimension (CD) uniformity of photoresist island patterns using alternating phase shifting maskTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·0 cites·20 claims
- 2567US11545622B2CMP stop layer and sacrifice layer for high yield small size MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 3, 2023·0 cites·20 claims
- 2664US11631802B2Etching and encapsulation scheme for magnetic tunnel junction fabricationHEADWAY TECH INC·Filed 2019·Granted Apr 18, 2023·0 cites·9 claims
- 2743US11895928B2Integration scheme for three terminal spin-orbit-torque (SOT) switching devicesHEADWAY TECH INC·Filed 2019·Granted Feb 6, 2024·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →