Inventor · disambiguated record
Zhiqiang Wu
Also filed as: WU ZHIQIANG · WU ZHIQIANG JEFF
307 granted patents·70 pending applications·5,005 citations·filing 1996–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD186MICRON TECHNOLOGY INC57TEXAS INSTRUMENTS INC31TAIWAN SEMICONDUCTOR MFG30WU ZHIQIANG12
Top patents by PatentIndex Score
377 records- 0199US9412828B2Aligned gate-all-around structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 9, 2016·749 cites·19 claims
- 0299US6545903B1Self-aligned resistive plugs for forming memory cell with phase change materialTEXAS INSTRUMENTS INC·Filed 2001·Granted Apr 8, 2003·470 cites·23 claims
- 0398US11769804B2Method of manufacturing semiconductor device and associated memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 26, 2023·4 cites·20 claims
- 0498US9853150B1Method of fabricating epitaxial gate dielectrics and semiconductor device of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 26, 2017·46 cites·20 claims
- 0598US9006786B2Fin structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 14, 2015·48 cites·20 claims
- 0698US8901607B2Semiconductor device and fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 2, 2014·60 cites·20 claims
- 0798US8633516B1Source/drain stack stressor for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jan 21, 2014·200 cites·20 claims
- 0898US6261964B1Material removal method for forming a structureMICRON TECHNOLOGY INC·Filed 1998·Granted Jul 17, 2001·309 cites·86 claims
- 0997US11342422B2Method of manufacturing semiconductor device and associated memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·4 cites·20 claims
- 1097US9634127B2FinFET device and method for fabricating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 25, 2017·16 cites·20 claims
- 1197US9559181B2Structure and method for FinFET device with buried sige oxideTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 31, 2017·20 cites·20 claims
- 1297US9318606B2FinFET device and method of fabricating sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 19, 2016·23 cites·18 claims
- 1397US9209185B2Method and structure for FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 8, 2015·23 cites·20 claims
- 1497US9006842B2Tuning strain in semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 14, 2015·26 cites·20 claims
- 1597US8815691B2Method of fabricating a gate all around deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Aug 26, 2014·37 cites·20 claims
- 1697US8614127B1Method of making a FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 24, 2013·41 cites·20 claims
- 1797US8487378B2Non-uniform channel junction-less transistorGOTO KEN-ICHI·Filed 2011·Granted Jul 16, 2013·420 cites·20 claims
- 1897US8338259B2Semiconductor device with a buried stressorWU ZHIQIANG·Filed 2010·Granted Dec 25, 2012·31 cites·6 claims
- 1996US11557659B2Gate all around transistor device and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 17, 2023·6 cites·20 claims
- 2096US11392040B2System and method for performing extreme ultraviolet photolithography processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 19, 2022·4 cites·20 claims
- 2196US9224736B1Structure and method for SRAM FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 29, 2015·20 cites·20 claims
- 2296US9202917B2Buried SiGe oxide FinFET scheme for device enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 1, 2015·25 cites·20 claims
- 2396US9178067B1Structure and method for FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 3, 2015·17 cites·17 claims
- 2496US8890207B2FinFET design controlling channel thicknessWU ZHIQIANG·Filed 2011·Granted Nov 18, 2014·39 cites·22 claims
- 2596US8497171B1FinFET method and structure with embedded underlying anti-punch through layerWu wei-hao·Filed 2012·Granted Jul 30, 2013·138 cites·20 claims
- 2696US7189627B2Method to improve SRAM performance and stabilityTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 13, 2007·131 cites·21 claims
- 2796US7038258B2Semiconductor device having a localized halo implant therein and method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2004·Granted May 2, 2006·99 cites·11 claims
- 2895US12166089B2Method of manufacturing semiconductor device and associated memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·1 cites·20 claims
- 2995US11676648B2Current steering in reading magnetic tunnel junctionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 13, 2023·3 cites·20 claims
- 3095US10134915B22-D material transistor with vertical structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·9 cites·21 claims
- 3195US9437683B2Method and structure for FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 6, 2016·8 cites·20 claims
- 3295US9257559B2Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 9, 2016·17 cites·20 claims
- 3394US11768437B2System and method for performing extreme ultraviolet photolithography processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 26, 2023·2 cites·20 claims
- 3494USD975332SDownlightSHENZHEN LINGKE TECH CO LTD·Filed 2021·Granted Jan 10, 2023·19 cites·1 claims
- 3594US11527622B2Effective work function tuning via silicide induced interface dipole modulation for metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·3 cites·20 claims
- 3694US11342016B2Read circuit for magnetic tunnel junction (MTJ) memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·2 cites·20 claims
- 3794US9632670B2OData service provisioning on top of genil layerSAP SE·Filed 2015·Granted Apr 25, 2017·16 cites·20 claims
- 3894US9627476B2Fin structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 18, 2017·10 cites·20 claims
- 3994US8765533B2Fin-like field effect transistor (FinFET) channel profile engineering method and associated deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 1, 2014·21 cites·20 claims
- 4094US6309975B1Methods of making implanted structuresMICRON TECHNOLOGY INC·Filed 1997·Granted Oct 30, 2001·83 cites·72 claims
- 4194US5925918AGate stack with improved sidewall integrityMICRON TECHNOLOGY INC·Filed 1997·Granted Jul 20, 1999·136 cites·9 claims
- 4293US11990522B2Effective work function tuning via silicide induced interface dipole modulation for metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·2 cites·20 claims
- 4393US9721955B2Structure and method for SRAM FinFET device having an oxide featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 1, 2017·9 cites·21 claims
- 4493US6599840B2Material removal method for forming a structureMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 29, 2003·54 cites·51 claims
- 4593US6011307AAnisotropic conductive interconnect material for electronic devices, method of use and resulting productMICRON TECHNOLOGY INC·Filed 1997·Granted Jan 4, 2000·155 cites·38 claims
- 4692US11942134B2Memory circuit and write methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·1 cites·20 claims
- 4792US11929409B2Semiconductor device with improved source and drain contact area and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 12, 2024·1 cites·20 claims
- 4892US10163905B2Method and structure for FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·4 cites·20 claims
- 4992US9941406B2FinFETs with source/drain claddingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 10, 2018·6 cites·20 claims
- 5092US9490348B2Method of forming a FinFET having an oxide region in the source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 8, 2016·8 cites·20 claims
Showing the top 50 of 377 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →