Inventor · disambiguated record
Zhiyi Yu
Also filed as: YU ZHIYI · YU ZHIYI JIMMY
23 granted patents·21 pending applications·1,421 citations·filing 1998–2021
96Inventor score
Top patents by PatentIndex Score
44 records- 0199US6709989B2Method for fabricating a semiconductor structure including a metal oxide interface with siliconMOTOROLA INC·Filed 2001·Granted Mar 23, 2004·686 cites·6 claims
- 0298US6501121B1Semiconductor structureMOTOROLA INC·Filed 2000·Granted Dec 31, 2002·232 cites·22 claims
- 0394US6291319B1Method for fabricating a semiconductor structure having a stable crystalline interface with siliconMOTOROLA INC·Filed 1999·Granted Sep 18, 2001·148 cites·40 claims
- 0488US6432546B1Microelectronic piezoelectric structure and method of forming the sameMOTOROLA INC·Filed 2000·Granted Aug 13, 2002·43 cites·16 claims
- 0588US6319730B1Method of fabricating a semiconductor structure including a metal oxide interfaceMOTOROLA INC·Filed 1999·Granted Nov 20, 2001·94 cites·23 claims
- 0686US6241821B1Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with siliconMOTOROLA INC·Filed 1999·Granted Jun 5, 2001·45 cites·22 claims
- 0781US6482538B2Microelectronic piezoelectric structure and method of forming the sameMOTOROLA INC·Filed 2001·Granted Nov 19, 2002·25 cites·14 claims
- 0876US6270568B1Method for fabricating a semiconductor structure with reduced leakage current densityMOTOROLA INC·Filed 1999·Granted Aug 7, 2001·44 cites·18 claims
- 0973US6885065B2Ferromagnetic semiconductor structure and method for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Apr 26, 2005·16 cites·15 claims
- 1073US6693298B2Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form sameMOTOROLA INC·Filed 2001·Granted Feb 17, 2004·16 cites·22 claims
- 1173US6667196B2Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the methodMOTOROLA INC·Filed 2001·Granted Dec 23, 2003·16 cites·41 claims
- 1265US11798979B2Integrated capacitor with sidewall having reduced roughnessTEXAS INSTRUMENTS INC·Filed 2021·Granted Oct 24, 2023·0 cites·23 claims
- 1364US7045815B2Semiconductor structure exhibiting reduced leakage current and method of fabricating sameFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted May 16, 2006·11 cites·11 claims
- 1459US7141857B2Semiconductor structures and methods of fabricating semiconductor structures comprising hafnium oxide modified with lanthanum, a lanthanide-series metal, or a combination thereofFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Nov 28, 2006·8 cites·11 claims
- 1558US7169619B2Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich processFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Jan 30, 2007·6 cites·8 claims
- 1656US6693033B2Method of removing an amorphous oxide from a monocrystalline surfaceMOTOROLA INC·Filed 2001·Granted Feb 17, 2004·6 cites·29 claims
- 1756US6159834AMethod of forming a gate quality oxide-compound semiconductor structureMOTOROLA INC·Filed 1998·Granted Dec 12, 2000·20 cites·27 claims
- 1851US10978548B2Integrated capacitor with sidewall having reduced roughnessTEXAS INSTRUMENTS INC·Filed 2016·Granted Apr 13, 2021·0 cites·21 claims
- 1947US11087451B2Generating multi-focal defect maps using optical toolsTEXAS INSTRUMENTS INC·Filed 2017·Granted Aug 10, 2021·0 cites·23 claims
- 2045US6806202B2Method of removing silicon oxide from a surface of a substrateMOTOROLA INC·Filed 2002·Granted Oct 19, 2004·1 cites·3 claims
- 2142US2001023660A1Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with siliconMOTOROLA INC·Filed 2001·Application pending·0 cites
- 2240US6750067B2Microelectronic piezoelectric structure and method of forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Jun 15, 2004·0 cites·11 claims
- 2340US2013264620A1Integrated circuit having ferroelectric memory with dense via barrierYU ZHIYI·Filed 2012·Application pending·0 cites
- 2437US2003082833A1Method for fabricating semiconductor structures utilizing the formation of a compliant substrateMOTOROLA INC·Filed 2001·Application pending·0 cites
- 2537US2002146895A1Method for fabricating a semiconductor structure including a metal oxide interface with siliconMOTOROLA INC·Filed 2002·Application pending·0 cites
- 2636US2002195599A1Low-defect semiconductor structure, device including the structure and method for fabricating structure and deviceMOTOROLA INC·Filed 2001·Application pending·0 cites
- 2736US2002158245A1Structure and method for fabricating semiconductor structures and devices utilizing binary metal oxide layersMOTOROLA INC·Filed 2001·Application pending·0 cites
- 2836US2003022431A1Structure including a monocrystalline perovskite oxide layer and method of forming the sameMOTOROLA INC·Filed 2001·Application pending·0 cites
- 2936US2003022525A1Semiconductor structure and device including a monocrystalline layer formed overlying a compliant substrate and a method of forming the sameMOTOROLA INC·Filed 2001·Application pending·0 cites
- 3036US2001013313A1Apparatus for fabricating semiconductor structures and method of forming the structuresMOTOROLA INC·Filed 2001·Application pending·0 cites
- 3136US2003015725A1Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate and ion beam assisted deposition for materials used to form the sameMOTOROLA INC·Filed 2001·Application pending·0 cites
- 3236US2004079285A1Automation of oxide material growth in molecular beam epitaxy systemsMOTOROLA INC·Filed 2002·Application pending·0 cites
- 3335US6852588B1Methods of fabricating semiconductor structures comprising epitaxial Hf3Si2 layersFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Feb 8, 2005·0 cites·43 claims
- 3435US2003034500A1Semiconductor structure including a zintl material buffer layer, device including the structure, and method of forming the structure and deviceMOTOROLA INC·Filed 2001·Application pending·0 cites
- 3535US2002140013A1Structure and method for fabricating semiconductor structures and devices utilizing a stable templateMOTOROLA INC·Filed 2001·Application pending·0 cites
- 3635US2002089023A1Low leakage current metal oxide-nitrides and method of fabricating sameMOTOROLA INC·Filed 2001·Application pending·0 cites
- 3735US2002000584A1Semiconductor structure and device including a monocrystalline conducting layer and method for fabricating the sameMOTOROLA INC·Filed 2001·Application pending·0 cites
- 3835US2003020114A1Metal-insulator-transition field-effect transistor utilizing a compliant substrate and method for fabricating sameMOTOROLA INC·Filed 2001·Application pending·0 cites
- 3934US6479173B1Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with siliconMOTOROLA INC·Filed 1999·Granted Nov 12, 2002·4 cites·53 claims
- 4034US2003057438A1Structure and method for fabricating semiconductor structures and devices utilizing lateral epitaxial overgrowthMOTOROLA INC·Filed 2001·Application pending·0 cites
- 4134US2003022520A1Light-assisted deposition method for fabricating a compliant substrate for epitaxial growth of monocrystalline materialsMOTOROLA INC·Filed 2001·Application pending·0 cites
- 4234US2002163024A1Structure and method for fabricating semiconductor structures and devices ultilizing lateral epitaxial overgrowth of a monocrystallaline material layer on a compliant substrateMOTOROLA INC·Filed 2001·Application pending·0 cites
- 4333US2002167005A1Semiconductor structure including low-leakage, high crystalline dielectric materials and methods of forming sameMOTOROLA INC·Filed 2001·Application pending·0 cites
- 4433US2002163010A1Wide bandgap semiconductor structure, semiconductor device including the structure, and methods of forming the structure and deviceMOTOROLA INC·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →