Inventor · disambiguated record
Zhixing Zhao
Also filed as: ZHAO ZHIXING
7 granted patents·10 pending applications·0 citations·filing 2019–2025
69Inventor score
Top patents by PatentIndex Score
17 records- 0168US2025219592A1Back-gate controlled power amplifierGLOBALFOUNDRIES US INC·Filed 2025·Application pending·0 cites
- 0268US2024055434A1Structure including transistor using buried insulator layer as gate dielectric and trench isolations in source and drainGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 0367US12324213B2Stress layout optimization for device performanceGLOBALFOUNDRIES US INC·Filed 2023·Granted Jun 3, 2025·0 cites·13 claims
- 0467US11837605B2Structure including transistor using buried insulator layer as gate dielectric and trench isolations in source and drainGLOBALFOUNDRIES US INC·Filed 2021·Granted Dec 5, 2023·0 cites·7 claims
- 0563US12308801B2Back-gate controlled power amplifierGLOBALFOUNDRIES US INC·Filed 2021·Granted May 20, 2025·0 cites·20 claims
- 0658US12268019B2Ferroelectric field-effect transistors with a hybrid wellGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 0758US11916109B2Bipolar transistor structures with base having varying horizontal width and methods to form sameGLOBALFOUNDRIES US INC·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
- 0857US2025227943A1Heterojunction bipolar transistors including an intrinsic base with an asymmetrical dopant depth profileGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 0956US2025227999A1Crystalline semiconductor layer between bipolar transistor and field effect transistor structuresGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 1056US2025228009A1Bipolar transistor base structure coupled to field effect transistor gate structureGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 1155US12046670B2Semiconductor device having a gate contact over an active regionGLOBALFOUNDRIES US INC·Filed 2021·Granted Jul 23, 2024·0 cites·20 claims
- 1255US11664432B2Stress layout optimization for device performanceGLOBALFOUNDRIES US INC·Filed 2019·Granted May 30, 2023·0 cites·12 claims
- 1353US2024234448A1Lateral capacitors of semiconductor devicesGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 1448US2024284680A1Ferroelectric memory device with multi-level bit cellGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 1548US2024035898A1Built-in temperature sensorsGLOBALFOUNDRIES US INC·Filed 2022·Application pending·0 cites
- 1647US2025185376A1Fully depleted semiconductor-on-insulator switch with built-in electrostatic discharge protectionGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 1745US2023131403A1Integrated circuit structure with spacer sized for gate contact and methods to form sameGLOBALFOUNDRIES US INC·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →