Inventor · disambiguated record
Zia Hossain
Also filed as: HOSSAIN ZIA
60 granted patents·10 pending applications·450 citations·filing 2000–2024
98Inventor score
Files withSEMICONDUCTOR COMPONENTS IND LLC32SEMICONDUCTOR COMPONENTS IND23HOSSAIN ZIA4GRIVNA GORDON M2ROBB FRANCINE Y2
Top patents by PatentIndex Score
70 records- 0194US8466513B2Semiconductor device with enhanced mobility and methodGRIVNA GORDON M·Filed 2011·Granted Jun 18, 2013·16 cites·35 claims
- 0292US9530883B2Insulated gate semiconductor device having a shield electrode structure and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Dec 27, 2016·8 cites·20 claims
- 0392US9269779B2Insulated gate semiconductor device having a shield electrode structureSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted Feb 23, 2016·13 cites·20 claims
- 0492US8034685B1Semiconductor component and method of manufactureSEMICONDUCTOR COMPONENT IND LLC·Filed 2010·Granted Oct 11, 2011·24 cites·26 claims
- 0592US7208385B2LDMOS transistor with enhanced termination region for high breakdown voltage with on-resistanceSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Apr 24, 2007·20 cites·16 claims
- 0691US9748224B2Heterojunction semiconductor device having integrated clamping deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Aug 29, 2017·6 cites·31 claims
- 0791US9299776B2Method of forming a semiconductor device including trench termination and trench structure thereforSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted Mar 29, 2016·10 cites·9 claims
- 0890US8907394B2Insulated gate semiconductor device having shield electrode structureSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted Dec 9, 2014·9 cites·22 claims
- 0990US8415739B2Semiconductor component and method of manufactureVENKATRAMAN PRASAD·Filed 2008·Granted Apr 9, 2013·22 cites·10 claims
- 1089US9070585B2Electronic device including a trench and a conductive structure therein and a process of forming the sameHOSSAIN ZIA·Filed 2012·Granted Jun 30, 2015·10 cites·20 claims
- 1188US6448625B1High voltage metal oxide device with enhanced well regionSEMICONDUCTOR COMPONENTS IND·Filed 2001·Granted Sep 10, 2002·46 cites·15 claims
- 1287US7126166B2High voltage lateral FET structure with improved on resistance performanceSEMICONDUCTOR COMPONENTS IND·Filed 2004·Granted Oct 24, 2006·50 cites·19 claims
- 1386US9029215B2Method of making an insulated gate semiconductor device having a shield electrode structureHOSSAIN ZIA·Filed 2012·Granted May 12, 2015·8 cites·20 claims
- 1486US7381603B2Semiconductor structure with improved on resistance and breakdown voltage performanceSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Jun 3, 2008·11 cites·23 claims
- 1585US10566466B2Termination structure for insulated gate semiconductor device and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Feb 18, 2020·3 cites·20 claims
- 1683US6982193B2Method of forming a super-junction semiconductor deviceSEMICONDUCTOR COMPONENTS IND·Filed 2004·Granted Jan 3, 2006·32 cites·20 claims
- 1782US9768295B2Semiconductor devices having super-junction trenches with conductive regions and method of making the sameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Sep 19, 2017·3 cites·20 claims
- 1882US9343528B2Process of forming an electronic device having a termination region including an insulating regionSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted May 17, 2016·6 cites·20 claims
- 1982US6773997B2Method for manufacturing a high voltage MOSFET semiconductor device with enhanced charge controllabilitySEMICONDUCTOR COMPONENTS IND·Filed 2001·Granted Aug 10, 2004·33 cites·8 claims
- 2081US10199373B2Method of forming a heterojunction semiconductor device having integrated clamping deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Feb 5, 2019·2 cites·21 claims
- 2181US7948033B2Semiconductor device having trench edge termination structureSEMICONDUCTOR COMPONENTS IND·Filed 2007·Granted May 24, 2011·9 cites·20 claims
- 2280US8928050B2Electronic device including a schottky contactLOECHELT GARY H·Filed 2013·Granted Jan 6, 2015·5 cites·19 claims
- 2379US11342424B2Electronic device including a transistor and a shield electrodeSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted May 24, 2022·1 cites·20 claims
- 2478US12278266B2Reverse recovery charge reduction in semiconductor devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Granted Apr 15, 2025·0 cites·20 claims
- 2578US11081554B2Insulated gate semiconductor device having trench termination structure and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Aug 3, 2021·3 cites·17 claims
- 2678US9842925B2Insulated gate semiconductor device having a shield electrode structure and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Dec 12, 2017·2 cites·20 claims
- 2776US8168466B2Schottky diode and method thereforQUDDUS MOHAMMED TANVIR·Filed 2007·Granted May 1, 2012·7 cites·17 claims
- 2875US9112026B2Semiconductor devices and method of making the sameSEMICONDUCTOR COMPONENTS IND·Filed 2012·Granted Aug 18, 2015·3 cites·19 claims
- 2975US6492679B1Method for manufacturing a high voltage MOSFET device with reduced on-resistanceSEMICONDUCTOR COMPONENTS IND·Filed 2001·Granted Dec 10, 2002·21 cites·4 claims
- 3074US7714381B2Method of forming an integrated power device and structureSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted May 11, 2010·3 cites·12 claims
- 3174US6589845B1Method of forming a semiconductor device and structure thereforSEMICONDUCTOR COMPONENTS IND·Filed 2002·Granted Jul 8, 2003·21 cites·7 claims
- 3273US8207035B2Method of forming an integrated power device and structureROBB FRANCINE Y·Filed 2010·Granted Jun 26, 2012·2 cites·12 claims
- 3370US10658351B2Electronic device including a transistor having structures with different characteristicsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted May 19, 2020·1 cites·19 claims
- 3469US12471351B2Shielded gate trench power MOSFET with high-k shield dielectricSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Granted Nov 11, 2025·0 cites·23 claims
- 3568US11776997B2Reverse recovery charge reduction in semiconductor devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Oct 3, 2023·0 cites·20 claims
- 3668US11380805B2Termination structure for insulated gate semiconductor device and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Jul 5, 2022·0 cites·20 claims
- 3768US10418439B2Method of forming a semiconductor device termination and structure thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Sep 17, 2019·1 cites·12 claims
- 3867US9324784B2Electronic device having a termination region including an insulating regionSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted Apr 26, 2016·2 cites·20 claims
- 3966US9620639B2Electronic device including a trench and a conductive structure thereinSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Apr 11, 2017·1 cites·17 claims
- 4066US6982461B2Lateral FET structure with improved blocking voltage and on resistance performance and methodSEMICONDUCTOR COMPONENTS IND·Filed 2003·Granted Jan 3, 2006·13 cites·9 claims
- 4165US9450091B2Semiconductor device with enhanced mobility and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2014·Granted Sep 20, 2016·1 cites·13 claims
- 4265US8138033B2Semiconductor component and method of manufactureHOSSAIN ZIA·Filed 2007·Granted Mar 20, 2012·3 cites·19 claims
- 4364US12490451B2Process of forming an electronic device including a component structure adjacent to a trenchSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Granted Dec 2, 2025·0 cites·20 claims
- 4464US12166090B2Electronic device including a transistor and a shield electrodeSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Granted Dec 10, 2024·0 cites·20 claims
- 4564US10593666B2Method of forming a heterojunction semiconductor device having integrated clamping deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Mar 17, 2020·0 cites·20 claims
- 4663US9490372B2Method of forming a semiconductor device termination and structure thereforGUITART JAUME ROIG·Filed 2011·Granted Nov 8, 2016·2 cites·15 claims
- 4763US6919598B2LDMOS transistor with enhanced termination region for high breakdown voltage with low on-resistanceFiled 2003·Granted Jul 19, 2005·9 cites·17 claims
- 4862US10923604B2Termination structure for insulated gate semiconductor device and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Feb 16, 2021·0 cites·20 claims
- 4962US10707203B2Cascode semiconductor device structure and method thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Jul 7, 2020·0 cites·20 claims
- 5061US8778764B2Method of making an insulated gate semiconductor device having a shield electrode structure and structure thereforHOSSAIN ZIA·Filed 2012·Granted Jul 15, 2014·1 cites·11 claims
Showing the top 50 of 70 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Zia Hossain files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →