Inventor · disambiguated record
Zichen Liu
Also filed as: LIU ZICHEN
3 granted patents·14 pending applications·12 citations·filing 2014–2024
61Inventor score
Files withYANGTZE MEMORY TECH CO LTD14WUHAN RES INST OF POSTS AND TELECOMM2WUHAN RES INST OF POSTS AND TELECOMMUNICATIONS1
Top patents by PatentIndex Score
17 records- 0184US9581878B2Wavelength selective switch device, wavelength switching method for the same and communication apparatusWUHAN RES INST OF POSTS AND TELECOMMUNICATIONS·Filed 2014·Granted Feb 28, 2017·9 cites·19 claims
- 0265US9380361B2Wavelength selective switch and wavelength selection methodWUHAN RES INST OF POSTS AND TELECOMM·Filed 2014·Granted Jun 28, 2016·2 cites·6 claims
- 0363US2025338487A1Managing word lines in semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0463US2025275129A1Memory devices having vertical transistors in otp memory cellsYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0561US2025293188A1Managing peripheral circuitries in semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0661US2025309165A1Managing peripheral circuitries in semiconductive devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0758US2023380136A1Memory devices having vertical transistors and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 0857US9380360B2Wavelength selective switch and wavelength selection methodWUHAN RES INST OF POSTS AND TELECOMM·Filed 2014·Granted Jun 28, 2016·1 cites·10 claims
- 0957US2024074156A1Memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1056US2024172415A1Vertical transistors and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 1156US2024422959A1Semiconductor structures and fabrication methods thereof, memory and memory systemsYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1256US2025017025A1Methods of fabricating memory devices including capacitorsYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1355US2025113481A1Semiconductor device and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1454US2024098973A1Three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1553US2025280529A1Semiconductor devices and fabrication methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1652US2024389296A1Semiconductor structure, fabrication method thereof, memory and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1750US2025338491A1Memory and forming method thereof, and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →