Inventor · disambiguated record
Zihui Wang
Also filed as: WANG ZIHUI
55 granted patents·2 pending applications·221 citations·filing 2012–2025
98Inventor score
Top patents by PatentIndex Score
57 records- 0199US9608038B2Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layerAVALANCHE TECHNOLOGY INC·Filed 2016·Granted Mar 28, 2017·40 cites·20 claims
- 0298US11785784B2Multilayered seed for perpendicular magnetic structure including an oxide layerAVALANCHE TECHNOLOGY INC·Filed 2022·Granted Oct 10, 2023·2 cites·12 claims
- 0398US9070855B2Magnetic random access memory having perpendicular enhancement layerAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Jun 30, 2015·40 cites·24 claims
- 0497US10950659B2Multilayered seed for perpendicular magnetic structureAVALANCHE TECHNOLOGY INC·Filed 2020·Granted Mar 16, 2021·3 cites·20 claims
- 0595US9748471B2Perpendicular magnetic memory element having magnesium oxide cap layerAVALANCHE TECHNOLOGY INC·Filed 2017·Granted Aug 29, 2017·9 cites·20 claims
- 0692US10090456B2Magnetic memory element including oxide/metal composite layers formed adjacent to fixed layerAVALANCHE TECHNOLOGY INC·Filed 2017·Granted Oct 2, 2018·3 cites·20 claims
- 0792US9306154B2Magnetic random access memory with perpendicular enhancement layerAVALANCHE TECHNOLOGY INC·Filed 2015·Granted Apr 5, 2016·6 cites·21 claims
- 0891US10720469B2Multilayered seed structure for magnetic memory element including a CoFeB seed layerAVALANCHE TECHNOLOGY INC·Filed 2019·Granted Jul 21, 2020·2 cites·20 claims
- 0991US8885395B2Magnetoresistive logic cell and method of useZHOU YUCHEN·Filed 2012·Granted Nov 11, 2014·14 cites·6 claims
- 1089US10361362B2Magnetic random access memory with ultrathin reference layerAVALANCHE TECHNOLOGY INC·Filed 2017·Granted Jul 23, 2019·2 cites·18 claims
- 1189US10008663B1Perpendicular magnetic fixed layer with high anisotropyAVALANCHE TECHNOLOGY INC·Filed 2017·Granted Jun 26, 2018·6 cites·17 claims
- 1288US12133395B2Multilayered seed for perpendicular magnetic structure including an oxide layerAVALANCHE TECHNOLOGY INC·Filed 2023·Granted Oct 29, 2024·0 cites·8 claims
- 1388US10153017B2Method for sensing memory element coupled to selector deviceAVALANCHE TECHNOLOGY INC·Filed 2016·Granted Dec 11, 2018·6 cites·12 claims
- 1488US8891291B2Magnetoresistive logic cell and method of useAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Nov 18, 2014·12 cites·21 claims
- 1586US9831421B2Magnetic memory element with composite fixed layerAVALANCHE TECHNOLOGY INC·Filed 2015·Granted Nov 28, 2017·4 cites·24 claims
- 1685US9647032B2Spin-orbitronics device and applications thereofAVALANCHE TECHNOLOGY INC·Filed 2015·Granted May 9, 2017·4 cites·10 claims
- 1785US9252187B2Devices and methods for measurement of magnetic characteristics of MRAM wafers using magnetoresistive test stripsAVALANCHE TECHNOLOGY INC·Filed 2014·Granted Feb 2, 2016·6 cites·9 claims
- 1885US9082951B2Magnetic random access memory with perpendicular enhancement layerAVALANCHE TECHNOLOGY INC·Filed 2014·Granted Jul 14, 2015·5 cites·20 claims
- 1984US10032979B2Magnetic memory element with iridium anti-ferromagnetic coupling layerAVALANCHE TECHNOLOGY INC·Filed 2017·Granted Jul 24, 2018·2 cites·20 claims
- 2084US9679625B2Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layerAVALANCHE TECHNOLOGY INC·Filed 2015·Granted Jun 13, 2017·5 cites·18 claims
- 2183US9396781B2Magnetic random access memory having perpendicular composite reference layerAVALANCHE TECHNOLOGY INC·Filed 2014·Granted Jul 19, 2016·3 cites·11 claims
- 2282US8836061B2Magnetic tunnel junction with non-metallic layer adjacent to free layerAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Sep 16, 2014·5 cites·30 claims
- 2380US9871191B2Magnetic random access memory with ultrathin reference layerAVALANCHE TECHNOLOGY INC·Filed 2015·Granted Jan 16, 2018·4 cites·20 claims
- 2480US2025063952A1Magnetic Memory Element Including Perpendicular Enhancement Layer and Oxide Cap LayerAVALANCHE TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2579US10727400B2Magnetic random access memory with perpendicular enhancement layerAVALANCHE TECHNOLOGY INC·Filed 2018·Granted Jul 28, 2020·1 cites·25 claims
- 2679US9166146B2Electric field assisted MRAM and method for using the sameAVALANCHE TECHNOLOGY INC·Filed 2014·Granted Oct 20, 2015·6 cites·19 claims
- 2778US12133471B2Magnetic memory element including perpendicular enhancement layers and dual oxide cap layersAVALANCHE TECHNOLOGY INC·Filed 2023·Granted Oct 29, 2024·0 cites·20 claims
- 2878US9871190B2Magnetic random access memory with ultrathin reference layerAVALANCHE TECHNOLOGY INC·Filed 2014·Granted Jan 16, 2018·2 cites·20 claims
- 2978US9070692B2Shields for magnetic memory chip packagesAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Jun 30, 2015·5 cites·27 claims
- 3078US8611145B2Spin-transfer torque magnetic random access memory (STTMRAM) device with shared transistor and minimal written data disturbanceAVALANCHE TECHNOLOGY INC·Filed 2012·Granted Dec 17, 2013·5 cites·23 claims
- 3177US11348971B2Multilayered seed for perpendicular magnetic structureAVALANCHE TECHNOLOGY INC·Filed 2021·Granted May 31, 2022·0 cites·20 claims
- 3274US11758822B2Magnetic memory element incorporating dual perpendicular enhancement layersAVALANCHE TECHNOLOGY INC·Filed 2022·Granted Sep 12, 2023·0 cites·20 claims
- 3374US9231027B2Magnetic random access memory having perpendicular enhancement layer and interfacial anisotropic free layerAVALANCHE TECHNOLOGY INC·Filed 2014·Granted Jan 5, 2016·2 cites·18 claims
- 3473US12284813B2Nonvolatile memory device including dual memory layersAVALANCHE TECHNOLOGY INC·Filed 2023·Granted Apr 22, 2025·0 cites·10 claims
- 3573US8891292B2Magnetoresistive layer structure with voltage-induced switching and logic cell applicationAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Nov 18, 2014·2 cites·17 claims
- 3672US9647202B2Magnetic random access memory with perpendicular enhancement layerAVALANCHE TECHNOLOGY INC·Filed 2014·Granted May 9, 2017·2 cites·6 claims
- 3771US12382642B1Nonvolatile memory device including dual memory layersAVALANCHE TECHNOLOGY INC·Filed 2025·Granted Aug 5, 2025·0 cites·9 claims
- 3871US9502092B2Unipolar-switching perpendicular MRAM and method for using sameAVALANCHE TECHNOLOGY INC·Filed 2015·Granted Nov 22, 2016·3 cites·9 claims
- 3971US8879309B2Method and apparatus for programming a spin-transfer torque magnetic random access memory (STTMRAM) arrayAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Nov 4, 2014·3 cites·16 claims
- 4070US10438997B2Multilayered seed structure for magnetic memory element including a CoFeB seed layerAVALANCHE TECHNOLOGY INC·Filed 2019·Granted Oct 8, 2019·1 cites·21 claims
- 4170US8806284B2Method for bit-error rate testing of resistance-based RAM cells using a reflected signalWANG ZIHUI·Filed 2012·Granted Aug 12, 2014·5 cites·20 claims
- 4263US12278195B1Shielding of packaged magnetic random access memoryAVALANCHE TECHNOLOGY INC·Filed 2023·Granted Apr 15, 2025·0 cites·20 claims
- 4363US9337417B2Magnetic random access memory with perpendicular interfacial anisotropyAVALANCHE TECHNOLOGY INC·Filed 2014·Granted May 10, 2016·1 cites·11 claims
- 4460US9634244B2Magnetic random access memory with perpendicular interfacial anisotropyAVALANCHE TECHNOLOGY INC·Filed 2016·Granted Apr 25, 2017·0 cites·11 claims
- 4557US9548334B2Magnetic tunnel junction with perpendicular enhancement layer and thin reference layerAVALANCHE TECHNOLOGY INC·Filed 2014·Granted Jan 17, 2017·0 cites·6 claims
- 4656US12432931B2Memory cell including two selectors and method of making sameAVALANCHE TECHNOLOGY INC·Filed 2022·Granted Sep 30, 2025·0 cites·15 claims
- 4756US10490737B2Magnetic memory element including magnesium perpendicular enhancement layerAVALANCHE TECHNOLOGY INC·Filed 2019·Granted Nov 26, 2019·0 cites·26 claims
- 4855US9543506B2Magnetic random access memory with tri-layer reference layerAVALANCHE TECHNOLOGY INC·Filed 2016·Granted Jan 10, 2017·0 cites·19 claims
- 4954US9559144B2Magnetic random access memory element having tantalum perpendicular enhancement layerAVALANCHE TECHNOLOGY INC·Filed 2015·Granted Jan 31, 2017·0 cites·20 claims
- 5052USRE47975EPerpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layerAVALANCHE TECHNOLOGY INC·Filed 2018·Granted May 5, 2020·0 cites·29 claims
Showing the top 50 of 57 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →