Inventor · disambiguated record
Zongliang Huo
Also filed as: HUO ZONGLIANG
139 granted patents·136 pending applications·243 citations·filing 2007–2025
99Inventor score
Files withYANGTZE MEMORY TECH CO LTD248INST OF MICROELECTRONICS CAS16HUO ZONGLIANG8LIU MING2SAMSUNG ELECTRONICS CO LTD1
Top patents by PatentIndex Score
275 records- 0198US11227871B2Three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jan 18, 2022·4 cites·20 claims
- 0298US10510415B1Memory device using comb-like routing structure for reduced metal line loadingYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 17, 2019·36 cites·20 claims
- 0397US11963356B2Three-dimensional memory device without gate line slits and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Apr 16, 2024·2 cites·20 claims
- 0497US11574922B2Three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Feb 7, 2023·3 cites·20 claims
- 0597US11380629B2Methods for forming three-dimensional memory devices with supporting structure for staircase regionYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jul 5, 2022·5 cites·20 claims
- 0696US12255181B2Methods for forming three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Mar 18, 2025·2 cites·20 claims
- 0796US12136618B2Three-dimensional memory device with backside source contactYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Nov 5, 2024·2 cites·20 claims
- 0896US11222903B2Word line structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jan 11, 2022·4 cites·20 claims
- 0996US10559592B1Memory device and forming method thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Feb 11, 2020·14 cites·20 claims
- 1095US11903195B2Openings layout of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Feb 13, 2024·2 cites·19 claims
- 1195US11456290B2Three-dimensional memory device with backside source contactYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Sep 27, 2022·3 cites·20 claims
- 1295US9613981B2Vertical channel-type 3D semiconductor memory device and method for manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2016·Granted Apr 4, 2017·16 cites·11 claims
- 1395US9000409B23D semiconductor memory device and manufacturing method thereofHUO ZONGLIANG·Filed 2011·Granted Apr 7, 2015·23 cites·12 claims
- 1493US11257831B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Feb 22, 2022·3 cites·20 claims
- 1593US10804283B2Openings layout of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Oct 13, 2020·8 cites·6 claims
- 1692US11195846B2Staircase structures for three-dimensional memory device double-sided routingYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 7, 2021·8 cites·20 claims
- 1791US10892275B2Stacked connections in 3D memory and methods of making the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jan 12, 2021·4 cites·19 claims
- 1891US10868031B2Multiple-stack three-dimensional memory device and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 15, 2020·5 cites·6 claims
- 1991US10727245B2Trench structures for three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jul 28, 2020·5 cites·20 claims
- 2091US2025344393A1Methods for forming three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 2190US11574919B2Openings layout of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Feb 7, 2023·2 cites·17 claims
- 2289US11251195B2Three-dimensional memory device without gate line slits and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Feb 15, 2022·4 cites·20 claims
- 2389US10651192B2Word line structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted May 12, 2020·4 cites·16 claims
- 2488US12052871B2Three-dimensional memory and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jul 30, 2024·1 cites·20 claims
- 2588US11626416B2Method for forming three-dimensional memory device with backside source contactYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Apr 11, 2023·2 cites·20 claims
- 2688US2025318117A1Trench structures for three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 2787US12262533B2Dynamic flash memory (DFM) with multi-cellsYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Mar 25, 2025·1 cites·14 claims
- 2887US11211394B2Three-dimensional memory device with source structure and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Dec 28, 2021·3 cites·20 claims
- 2987US11031413B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jun 8, 2021·4 cites·16 claims
- 3087US10644020B2Three-dimensional semiconductor memory device with a substrate contact region and method of manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2015·Granted May 5, 2020·6 cites·13 claims
- 3186US11271007B2Three-dimensional memory and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Mar 8, 2022·3 cites·17 claims
- 3286US10943916B2Method for manufacturing three-dimensional memory structureYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Mar 9, 2021·4 cites·3 claims
- 3386US10784225B2Bonded semiconductor structures having bonding contacts made of indiffusible conductive materials and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Sep 22, 2020·4 cites·16 claims
- 3485US9070872B2Method for manufacturing three-dimensional semiconductor memory deviceHUO ZONGLIANG·Filed 2011·Granted Jun 30, 2015·9 cites·9 claims
- 3584US12232320B2Word line structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·18 claims
- 3684US11594552B2Three-dimensional memory device with corrosion-resistant composite spacerYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Feb 28, 2023·1 cites·20 claims
- 3784US2025280538A1Multiple-stack three-dimensional memory device and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 3883US12356616B2Openings layout of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 3983US11043565B2Three-dimensional memory device with source contacts connected by an adhesion layer and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jun 22, 2021·4 cites·20 claims
- 4083US10762965B2Memory device using comb-like routing structure for reduced metal line loadingYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Sep 1, 2020·2 cites·20 claims
- 4183US2025294742A1Openings layout of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 4282US12402313B2Methods for forming three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 4382US12058858B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Aug 6, 2024·1 cites·20 claims
- 4482US11114458B2Three-dimensional memory device with support structures in gate line slits and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Sep 7, 2021·2 cites·20 claims
- 4582US10727056B2Method and structure for cutting dense line patterns using self-aligned double patterningYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jul 28, 2020·3 cites·8 claims
- 4682US9437609B2Vertical channel-type 3D semiconductor memory device and method for manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2014·Granted Sep 6, 2016·4 cites·9 claims
- 4782US2025359011A1Dynamic flash memory (dfm) with ring-type insulator in channel for improved retentionYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 4882US2024324224A1Three-dimensional memory and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 4981US12363896B2Trench structures for three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 5081US11043506B2Three-dimensional memory device having a shielding layer and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jun 22, 2021·2 cites·28 claims
Showing the top 50 of 275 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →