Inventor · disambiguated record
Zongke Xu
Also filed as: XU ZONGKE
9 granted patents·15 pending applications·0 citations·filing 2020–2025
77Inventor score
Top patents by PatentIndex Score
24 records- 0186US2024389326A1Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0284US2025275141A1Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0382US12310025B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Granted May 20, 2025·0 cites·20 claims
- 0477US12349351B2Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·19 claims
- 0577US2025254877A1Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORYY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0673US12082414B2Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·14 claims
- 0772US2025038046A1Methods for forming stairs in three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0871US12469714B2Gateline mask design for removing sacrificial gateline polysilicon within stair step areaYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Nov 11, 2025·0 cites·20 claims
- 0969US11950419B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Apr 2, 2024·0 cites·19 claims
- 1067US11502098B2Methods for forming three-dimensional memeory devices with drain-select-gate cut structuresYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Nov 15, 2022·0 cites·20 claims
- 1163US2025324565A1Semiconductor device and manufacturing method thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1261US2025316593A1Semiconductor device, forming method and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1360US12302559B2Three-dimensional memory and method for manufacturing the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 1460US2025159881A1Merging schemes in semiconductive devicesYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1559US12148655B2Methods for forming stairs in three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Nov 19, 2024·0 cites·20 claims
- 1657US2025017026A13d memory cell with dual-side contacts and method of fabricationYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1756US2024172439A1Semiconductor structures and fabrication methods thereof, three-dimensional memories, and memory systemsYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 1855US2025126786A1Fabricating filling structures in three-dimensional semiconductive devicesYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1955US2024215238A1Three-dimensional nand memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 2053US2024194607A1Semiconductor device and manufacturing method thereof, memory and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 2151US2024170389A1Three-dimensional memory devices and system having the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 2246US12193229B2Semiconductor device fabricationYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
- 2345US2022230971A1Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Application pending·0 cites
- 2434US2022149062A1Three-dimensional nand memory device with novel dummy channel structuresYANGTZE MEMORY TECH CO LTD·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →