Inventor · disambiguated record
Zvonimir Gabric
Also filed as: GABRIC ZVONIMIR
19 granted patents·1 pending application·427 citations·filing 1993–2007
95Inventor score
Top patents by PatentIndex Score
20 records- 0194US6177698B1Formation of controlled trench top isolation layers for vertical transistorsINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Jan 23, 2001·144 cites·10 claims
- 0293US5281302AMethod for cleaning reaction chambers by plasma etchingSIEMENS AG·Filed 1993·Granted Jan 25, 1994·87 cites·7 claims
- 0387US7807563B2Method for manufacturing a layer arrangement and layer arrangementINFINEON TECHNOLOGIES AG·Filed 2007·Granted Oct 5, 2010·23 cites·18 claims
- 0475US7033926B2Strip conductor arrangement and method for producing a strip conductor arrangementINFINEON TECHNOLOGIES AG·Filed 2002·Granted Apr 25, 2006·24 cites·27 claims
- 0573US7755160B2Plasma excited chemical vapor deposition method silicon/oxygen/nitrogen-containing-material and layered assemblyINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jul 13, 2010·4 cites·17 claims
- 0670US6184091B1Formation of controlled trench top isolation layers for vertical transistorsINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Feb 6, 2001·32 cites·19 claims
- 0768US7023063B2Arrangement of microstructuresINFINEON TECHNOLOGIES AG·Filed 2004·Granted Apr 4, 2006·12 cites·8 claims
- 0866US5965203AMethod for depositing a silicon oxide layerSIEMENS AG·Filed 1996·Granted Oct 12, 1999·27 cites·8 claims
- 0961US6737692B2Method for fabricating a component, and component having a metal layer and an insulation layerINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 18, 2004·7 cites·5 claims
- 1060US6429092B1Collar formation by selective oxide depositionINFINEON TECHNOLOGIES AG·Filed 2000·Granted Aug 6, 2002·7 cites·15 claims
- 1159US5399389AMethod for locally and globally planarizing chemical vapor deposition of SiO2 layers onto structured silicon substratesSIEMENS AG·Filed 1993·Granted Mar 21, 1995·31 cites·15 claims
- 1258US6649468B2Method for fabricating a microelectronic componentINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 18, 2003·8 cites·12 claims
- 1355US6686643B2Substrate with at least two metal structures deposited thereon, and method for fabricating the sameINFINEON TECHNOLOGIES AG·Filed 2000·Granted Feb 3, 2004·7 cites·6 claims
- 1452US6825098B2Method for fabricating microstructures and arrangement of microstructuresINFINEON TECHNOLOGIES AG·Filed 2003·Granted Nov 30, 2004·4 cites·16 claims
- 1545US7276300B2Microelectronic structure having a hydrogen barrier layerINFINEON TECHNOLOGIES AG·Filed 2002·Granted Oct 2, 2007·2 cites·8 claims
- 1643US7259441B2Hollow structure in an integrated circuit and method for producing such a hollow structure in an integrated circuitINFINEON TECHNOLOGIES AG·Filed 2002·Granted Aug 21, 2007·1 cites·9 claims
- 1740US2007120263A1Conductor track arrangement and associated production methodGABRIC ZVONIMIR·Filed 2006·Application pending·0 cites
- 1833US5837611AProduction method for an insulation layer functioning as an intermetal dielectricSIEMENS AG·Filed 1997·Granted Nov 17, 1998·4 cites·9 claims
- 1932US6380074B1Deposition of various base layers for selective layer growth in semiconductor productionINFINEON TECHNOLOGIES AG·Filed 2000·Granted Apr 30, 2002·0 cites·11 claims
- 2026US6551902B1Process for fabricating a buried, laterally insulated zone of increased conductivity in a semiconductor substrateINFINEON TECHNOLOGIES AG·Filed 1999·Granted Apr 22, 2003·3 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →