Inventor · disambiguated record

Hirofumi Watantani

Also filed as: WATATANI HIROFUMI

1 granted patent·20 citations·filing 2013–2013

43Inventor score

Technology areasH10P

Files withFUJITSU SEMICONDUCTOR LTD1

Top patents by PatentIndex Score

1 record

0195US8778814B2Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Jul 15, 2014·20 cites·7 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →