Inventor · name-matched record
ANDO TAKASHI
6 granted patents·11 pending applications·0 citations·filing 2022–2025
63Inventor score
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
17 records- 0184US2026058232A1Abnormality Determination System, Vehicle, Abnormality Determination Method, and ServerTOYOTA MOTOR CO LTD·Filed 2025·Application pending·0 cites
- 0282US2026054575A1Battery system, abnormality determination system, vehicle, abnormality determination method, and serverTOYOTA MOTOR CO LTD·Filed 2025·Application pending·0 cites
- 0370US12575110B2Localized anneal of ferroelectric dielectricIBM·Filed 2022·Granted Mar 10, 2026·0 cites·22 claims
- 0469US2026071992A1Threshold voltage adjustable field effect transistor biosensor using tri-layer electrodesIBM·Filed 2024·Application pending·0 cites
- 0569US2026056475A1Reticle stitching for semiconductorsIBM·Filed 2024·Application pending·0 cites
- 0668US12557295B2Embedded ReRAM with backside contactIBM·Filed 2022·Granted Feb 17, 2026·0 cites·19 claims
- 0764US12563786B2Single work function metal and multiple threshold voltage schemeIBM·Filed 2023·Granted Feb 24, 2026·0 cites·20 claims
- 0862US12568776B2Multifilament resistive memory with insulation layersIBM·Filed 2022·Granted Mar 3, 2026·0 cites·12 claims
- 0962US2026068307A1Stacked transistors with work function materialIBM·Filed 2024·Application pending·0 cites
- 1062US2026036543A1Threshold voltage adjustable transistor using interfacial dipole layerIBM·Filed 2024·Application pending·0 cites
- 1161US2026096147A1Discontinuous high dielectric constant (hk) layerIBM·Filed 2024·Application pending·0 cites
- 1261US2026101581A1Gate connection for stacked transistorsINT BUSINESS MACHINES CORPORATION·Filed 2024·Application pending·0 cites
- 1360US12575402B2Non-planar metal-insulator-metal structureIBM·Filed 2022·Granted Mar 10, 2026·0 cites·20 claims
- 1459US2026040675A1Monolithic stacked complementary transistor structures with dual work function metal gatesIBM·Filed 2024·Application pending·0 cites
- 1559US2026040674A1Monolithic stacked complementary transistor structures with dual work function metal gatesIBM·Filed 2024·Application pending·0 cites
- 1657US2026101552A1Backside replacement metal gate for stacked transistorsINT BUSINESS MACHINES CORPORATION·Filed 2024·Application pending·0 cites
- 1756US12550632B2Resistive memory with resistance spreading layerIBM·Filed 2022·Granted Feb 10, 2026·0 cites·15 claims
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Identity basis: exact name match across USPTO filings. How scoring works →