Inventor · name-matched record
CHENG KUAN-LUN
19 granted patents·6 pending applications·0 citations·filing 2021–2025
88Inventor score
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
25 records- 0196US2026101541A1Method and device for boosting performance of finfets via strained spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0295US2026075885A1Gate-all-around structure with self substrate isolation and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0394US2026068205A1Method for forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0492US2026082644A1Tuning threshold voltage in nanosheet transitor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0586US12557258B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 17, 2026·0 cites·20 claims
- 0685US12527064B2Power reduction in finFET structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jan 13, 2026·0 cites·20 claims
- 0785US2026071993A1Semiconductor structure having biosensor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0884US12563816B2Method for forming sidewall spacers disposed above mask layer and semiconductor devices fabricated thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 24, 2026·0 cites·20 claims
- 0984US12557643B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 17, 2026·0 cites·20 claims
- 1083US12598779B2Gate-all-around device with protective dielectric layer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 7, 2026·0 cites·20 claims
- 1183US12538557B2Semiconductor device and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jan 27, 2026·0 cites·20 claims
- 1282US12532517B2Fill fins for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 20, 2026·0 cites·20 claims
- 1382US12519009B2Replacement material for backside gate cut featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jan 6, 2026·0 cites·20 claims
- 1481US12557317B2Semiconductor devices with fin-top hard mask and methods for fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 17, 2026·0 cites·20 claims
- 1579US12598796B2High aspect ratio gate structure formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 7, 2026·0 cites·20 claims
- 1679US12563824B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 24, 2026·0 cites·20 claims
- 1779US2026032962A1Semiconductor device with backside gate isolation structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1878US12538518B2FinFET structure with fin top hard mask and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 27, 2026·0 cites·20 claims
- 1976US12598763B2Semiconductor device structure with metal gate stackTAIWAN SEMICONDUCTOR MFG COMPANY LTD·Filed 2023·Granted Apr 7, 2026·0 cites·20 claims
- 2073US12553854B2Device and method for detecting miniature targets in a fluid sampleTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 17, 2026·0 cites·20 claims
- 2171US12593504B2Transistors with varying width nanosheetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 31, 2026·0 cites·20 claims
- 2268US12593494B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 31, 2026·0 cites·20 claims
- 2367US12568648B2Backside source/drain contacts and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 3, 2026·0 cites·20 claims
- 2464US12568640B2Multi-gate devices with multi-layer inner spacers and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 3, 2026·0 cites·20 claims
- 2564US12568641B2Semiconductor device with varying numbers of channel layers and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 3, 2026·0 cites·20 claims
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Identity basis: exact name match across USPTO filings. How scoring works →