Inventor · name-matched record
CHIANG KUO-CHENG
19 granted patents·23 pending applications·1 citations·filing 2021–2025
88Inventor score
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
42 records- 0196US2026020280A1Stacked gate-all-around finfet and method forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0296US2026059852A1Method (and related apparatus) for forming a semiconductor device with reduced spacing between nanostructure field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0392US2026082644A1Tuning threshold voltage in nanosheet transitor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0492US2026096134A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0591US2026082637A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0689US12543352B2Integrated circuit with bottom dielectric insulators and fin sidewall spacers for reducing source/drain leakage currentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 3, 2026·1 cites·20 claims
- 0786US2026040624A1Manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0885US2026101579A1Semiconductor device structure with air gapTAIWAN SEMICONDUCTOR MFG COMPANY LTD·Filed 2025·Application pending·0 cites
- 0984US12563816B2Method for forming sidewall spacers disposed above mask layer and semiconductor devices fabricated thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 24, 2026·0 cites·20 claims
- 1083US2026059794A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1182US2026026044A1Gate isolation and connection of multigate devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1281US12557317B2Semiconductor devices with fin-top hard mask and methods for fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 17, 2026·0 cites·20 claims
- 1378US12538548B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 27, 2026·0 cites·20 claims
- 1478US2026040598A1Gate patterning process for multi-gate devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1577US2026040645A1P-Metal Gate First Gate Replacement Process for Multigate DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1676US12520518B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 6, 2026·0 cites·20 claims
- 1775US12557376B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 17, 2026·0 cites·20 claims
- 1875US12538569B2Tuning tensile strain on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 27, 2026·0 cites·20 claims
- 1974US12593475B2Field effect transistor with isolation structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 31, 2026·0 cites·20 claims
- 2073US12598787B2Field effect transistor with dual layer isolation structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 7, 2026·0 cites·20 claims
- 2172US12557371B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 17, 2026·0 cites·20 claims
- 2268US12593494B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 31, 2026·0 cites·20 claims
- 2366US12538570B2Reduction of gate-drain capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 27, 2026·0 cites·20 claims
- 2464US12581704B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 17, 2026·0 cites·20 claims
- 2564US12520543B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 6, 2026·0 cites·20 claims
- 2663US12588247B2Spacer structures for nano-sheet-based devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 24, 2026·0 cites·20 claims
- 2763US2026026059A1Semiconductor devices and methods for fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2862US2026096122A1Semiconductor structure including source/drain portions with reduced crystal defects and methods for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2962US2026026026A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3062US2026040622A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3162US2026059798A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3260US12532492B2Structure and formation method of semiconductor device with epitaxial structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 20, 2026·0 cites·20 claims
- 3360US2026090052A1Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3460US2026068204A1Methods for forming semiconductor device having nanosheet transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3556US12520565B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 6, 2026·0 cites·20 claims
- 3654US12575464B2Method of forming wafer-to-wafer bonding structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 10, 2026·0 cites·20 claims
- 3754US12575133B2Transistor device with work function metal layers and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 10, 2026·0 cites·20 claims
- 3853US2026101577A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG COMPANY LTD·Filed 2025·Application pending·0 cites
- 3953US2026068286A1Nanostructure field-effect transistor device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4051US2026101574A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG COMPANY LTD·Filed 2025·Application pending·0 cites
- 4150US2026101576A1Semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG COMPANY LTD·Filed 2025·Application pending·0 cites
- 4249US2026090089A1Multi-gate device structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
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Identity basis: exact name match across USPTO filings. How scoring works →