Inventor · name-matched record
CHOI KISIK
18 granted patents·6 pending applications·0 citations·filing 2021–2024
85Inventor score
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
24 records- 0172US12598970B2Top via on subtractively etched conductive lineINT BUSINESS MACHINES CORPORATION·Filed 2022·Granted Apr 7, 2026·0 cites·13 claims
- 0271US12550351B2Diffusion break between passive device and logic device with backside contactIBM·Filed 2023·Granted Feb 10, 2026·0 cites·20 claims
- 0368US12568814B2Buried power rail directly contacting backside power delivery networkIBM·Filed 2022·Granted Mar 3, 2026·0 cites·18 claims
- 0468US12557359B2Self-aligned backside contact with protruding source/drainIBM·Filed 2023·Granted Feb 17, 2026·0 cites·17 claims
- 0567US12550390B2Trench isolation for backside contact formationIBM·Filed 2023·Granted Feb 10, 2026·0 cites·19 claims
- 0665US12557320B2FVBP without backside Si recessIBM·Filed 2023·Granted Feb 17, 2026·0 cites·20 claims
- 0765US12550715B2Heterogeneous integration of device die having BSPDNIBM·Filed 2023·Granted Feb 10, 2026·0 cites·14 claims
- 0864US2026090021A1Deep via to preserve substrateIBM·Filed 2024·Application pending·0 cites
- 0963US12543544B2Backside direct contact formationIBM·Filed 2022·Granted Feb 3, 2026·0 cites·20 claims
- 1063US2026090071A1Semiconductor device with stress liner and backside contactIBM·Filed 2024·Application pending·0 cites
- 1163US2026090038A1Forksheet transistor multilayer bottom isolation regionIBM·Filed 2024·Application pending·0 cites
- 1262US12588265B2Semiconductor structure with enhanced placeholder position marginIBM·Filed 2023·Granted Mar 24, 2026·0 cites·20 claims
- 1362US12557626B2Self-aligned backside contact with deep trench last flowIBM·Filed 2022·Granted Feb 17, 2026·0 cites·11 claims
- 1462US2026101549A1Placeholder for backside contactINT BUSINESS MACHINES CORPORATION·Filed 2024·Application pending·0 cites
- 1561US12593468B2Self-aligned backside contact with increased contact areaIBM·Filed 2022·Granted Mar 31, 2026·0 cites·20 claims
- 1661US12557633B2Multiple critical dimension power railIBM·Filed 2022·Granted Feb 17, 2026·0 cites·25 claims
- 1761US12557635B2Hybrid power rail formation in dielectric isolation for semiconductor deviceIBM·Filed 2022·Granted Feb 17, 2026·0 cites·19 claims
- 1860US12588280B2Backsides subtractive M1 patterning with backside contact repair for tight N2P spaceIBM·Filed 2023·Granted Mar 24, 2026·0 cites·16 claims
- 1960US2026075889A1Hybrid isolation pillarsIBM·Filed 2024·Application pending·0 cites
- 2059US12568661B2Self-aligned backside trench epitaxy for low contact resistivityIBM·Filed 2022·Granted Mar 3, 2026·0 cites·20 claims
- 2159US12550712B2Bulk substrate backside power railIBM·Filed 2022·Granted Feb 10, 2026·0 cites·20 claims
- 2259US12527032B2Backside contact with shallow placeholder and easy backside semiconductor removalIBM·Filed 2022·Granted Jan 13, 2026·0 cites·17 claims
- 2358US2026068305A1Backside placeholder modification with narrow active region and backside contactIBM·Filed 2024·Application pending·0 cites
- 2454US12527068B2Two-dimensional self-aligned backside via-to-backside power rail (VBPR)IBM·Filed 2021·Granted Jan 13, 2026·0 cites·18 claims
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Identity basis: exact name match across USPTO filings. How scoring works →