Inventor · name-matched record
CHUANG CHENG-CHI
12 granted patents·2 pending applications·1 citations·filing 2020–2025
81Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD14
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
14 records- 0195US2026059802A1Integrated circuit structure with backside via railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0286US12538782B2Semiconductor device including recessed interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jan 27, 2026·0 cites·20 claims
- 0385US12525485B2Gate contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 13, 2026·1 cites·20 claims
- 0484US12557643B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 17, 2026·0 cites·20 claims
- 0582US12568670B2Self-aligned contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 3, 2026·0 cites·20 claims
- 0679US2026032962A1Semiconductor device with backside gate isolation structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0772US12581939B2Contact structure manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 17, 2026·0 cites·20 claims
- 0872US12550701B2Formation method of semiconductor device with stacked conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 10, 2026·0 cites·20 claims
- 0972US12532505B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 20, 2026·0 cites·20 claims
- 1068US12588242B2Field effect transistor with dual silicide and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 24, 2026·0 cites·20 claims
- 1165US12581934B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 17, 2026·0 cites·20 claims
- 1261US12532509B2Integrated circuit with backside trench for nanosheet removalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 20, 2026·0 cites·20 claims
- 1355US12525486B2Isolation structure for metal interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 13, 2026·0 cites·20 claims
- 1454US12538510B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 27, 2026·0 cites·20 claims
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Identity basis: exact name match across USPTO filings. How scoring works →