Inventor · name-matched record
CHUI CHI ON
20 granted patents·18 pending applications·0 citations·filing 2022–2025
88Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD38
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
38 records- 0194US2026075938A1Methods of forming semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0293US2026090084A1Method of fabricating a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0391US2026082653A1Gate structures in transistors and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0491US2026096185A1Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0590US2026068288A1Hardmask formation with hybrid materials in semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0689US2026075925A1Nanostructure field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0786US12525455B2Gate structures in transistors and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jan 13, 2026·0 cites·20 claims
- 0886US2026101559A1Forming seams with desirable dimensions in isolation regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0984US12588231B2Method of gap filling for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 24, 2026·0 cites·19 claims
- 1082US12532723B2Scalable patterning through layer expansion process and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 20, 2026·0 cites·20 claims
- 1181US12593498B2Semiconductor device and forming method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 31, 2026·0 cites·20 claims
- 1281US12543335B2Multilayer masking layer and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 3, 2026·0 cites·20 claims
- 1381US12527073B2Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jan 13, 2026·0 cites·20 claims
- 1480US12588267B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 24, 2026·0 cites·20 claims
- 1579US12598796B2High aspect ratio gate structure formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 7, 2026·0 cites·20 claims
- 1678US12575343B2Gate structures in transistor devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 10, 2026·0 cites·20 claims
- 1776US12575355B2Masking layer with post treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 10, 2026·0 cites·20 claims
- 1869US2026059822A1Gate structures in transistors and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1968US12520553B2Forming seams with desirable dimensions in isolation regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 6, 2026·0 cites·20 claims
- 2067US12593464B2Dielectric layer for nanosheet protection and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 31, 2026·0 cites·20 claims
- 2167US12532510B2Profile control of isolation structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 20, 2026·0 cites·20 claims
- 2267US2026040626A1Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2365US12527047B2Isolation structure for transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 13, 2026·0 cites·20 claims
- 2464US12563797B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 24, 2026·0 cites·20 claims
- 2564US12550402B2Nanostructure field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 10, 2026·0 cites·20 claims
- 2663US12550374B2Semiconductor device and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 10, 2026·0 cites·20 claims
- 2761US2026059800A1Fluorine incorporation for gaa transistors and the structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2860US2026082668A1Gap fill approach for high aspect ratio sheet-sheet spacing on nano-sheet structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2960US2026047138A1Squared sheet gate-all-around transistors with non-uniform gate insulatorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3059US12568662B2Semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 3, 2026·0 cites·20 claims
- 3158US2026060050A1Semiconductor device and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3258US2026047136A1Semiconductor device and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3358US2026047404A1Transistor spacer structures and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3458US2026096170A1Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3555US12598784B2Semiconductor device having doped gate dielectric layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 7, 2026·0 cites·20 claims
- 3654US12543343B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 3, 2026·0 cites·20 claims
- 3749US2026096182A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3846US2026090068A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
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Identity basis: exact name match across USPTO filings. How scoring works →