Inventor · name-matched record
DEWEY GILBERT
11 granted patents·1 pending application·0 citations·filing 2020–2024
77Inventor score
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
12 records- 0181US12520528B2Top-gate doped thin film transistorINTEL CORP·Filed 2023·Granted Jan 6, 2026·0 cites·20 claims
- 0259US2026096191A1Fabrication of gate-all-around integrated circuit structures having patterned nanowire scalingINTEL CORP·Filed 2024·Application pending·0 cites
- 0358US12568644B2Contact over active gate structures with trench contact layers for advanced integrated circuit structure fabricationINTEL CORP·Filed 2021·Granted Mar 3, 2026·0 cites·10 claims
- 0456US12520573B2SiGe:GAB source or drain structures with low resistivityINTEL CORP·Filed 2022·Granted Jan 6, 2026·0 cites·25 claims
- 0555US12581717B2Frontside and backside epi contactINTEL CORP·Filed 2021·Granted Mar 17, 2026·0 cites·20 claims
- 0655US12532726B2Jumper gate for advanced integrated circuit structuresINTEL CORP·Filed 2021·Granted Jan 20, 2026·0 cites·20 claims
- 0754US12575170B2Low temperature, high germanium, high boron SiGe:B pEPI with a silicon rich capping layer for ultra-low PMOS contact resistivity and thermal stabilityINTEL CORP·Filed 2021·Granted Mar 10, 2026·0 cites·17 claims
- 0853US12598777B2Low temperature, high germanium, high boron SiGe:B pEPI with titanium silicide contacts for ultra-low PMOS contact resistivity and thermal stabilityINTEL CORP·Filed 2021·Granted Apr 7, 2026·0 cites·14 claims
- 0953US12593486B2Dual contact process with selective depositionINTEL CORP·Filed 2020·Granted Mar 31, 2026·0 cites·17 claims
- 1053US12557340B2Cladding and condensation for strained semiconductor nanoribbonsINTEL CORP·Filed 2021·Granted Feb 17, 2026·0 cites·20 claims
- 1151US12543351B2Enriched semiconductor nanoribbons for producing intrinsic compressive strainINTEL CORP·Filed 2021·Granted Feb 3, 2026·0 cites·20 claims
- 1244US12575184B2CMOS architecture with thermally stable silicide gate workfunction metalLILAK AARON D·Filed 2021·Granted Mar 10, 2026·0 cites·20 claims
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Identity basis: exact name match across USPTO filings. How scoring works →