Inventor · name-matched record
FUKUSHIMA MASAHIRO
2 granted patents·27 pending applications·0 citations·filing 2022–2025
21Inventor score
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
29 records- 0182US2026086459A1Onium salt, chemically amplified positive resist composition and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 0281US2026063998A1Chemically amplified negative resist composition and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 0381US2026056469A1Iodonium salt, chemically amplified positive resist composition and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 0481US2026049169A1Sulfonium salt type monomer, sulfonium salt type quencher, polymer, chemically amplified resist composition, and pattern forming methodSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 0581US2026056464A1Sulfonium salt, chemically amplified positive resist composition and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 0681US2026056466A1Sulfonium salt, chemically amplified positive resist composition and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 0781US2026064001A1Chemically amplified positive resist composition and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 0880US2026044077A1Sulfonium salt monomer, polymer, chemically amplified resist composition, and pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 0980US2026042875A1Sulfonium salt monomer, polymer, chemically amplified resist composition, and pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 1080US2026044076A1Sulfonium salt type monomer, polymer, chemically amplified resist composition, and pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 1180US2026070876A1Onium salt, chemically amplified resist composition, and pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 1279US2026029713A1Onium salt, chemically amplified resist composition, and pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 1378US2026003278A1Chemically amplified negative resist composition and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 1478US2026050214A1Molecular resist composition and patterning processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 1578US2026079400A1Chemically amplified positive resist composition and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 1677US2026056471A1Chemically amplified positive resist composition and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 1777US2026010074A1Onium salt monomer, polymer, chemically amplified negative resist composition, and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 1877US2026050216A1Chemically amplified negative resist composition and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 1976US2026001978A1Sulfonium salt monomer, polymer, chemically amplified resist composition, and pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 2076US2026003266A1Onium salt, chemically amplified resist composition, and pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 2170US2026044078A1Onium-salt-type monomer, monomeric photo-acid generator, polymer, chemically-amplified resist compostion, and patterning processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 2270US2026044079A1Onium-salt-type monomer, monomeric photo-acid generator, polymer, chemically-amplified resist compostion, and patterning processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 2370US2026049053A1Onium salt, photoacid generator, chemically amplified resist composition, and patterning processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 2470US2026050213A1Onium salt, chemically amplified resist composition, and patterning processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 2569US2026044075A1Onium salt, chemically amplified resist composition, and pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 2668US2026028313A1Onium salt, chemically amplified resist composition, and pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 2762US12596303B2Resist composition and pattern forming processSHIN ETSU CHEMICAL CO LTD·Filed 2023·Granted Apr 7, 2026·0 cites·8 claims
- 2860US2026050217A1Sulfonium salt monomer, sulfonium salt quencher, polymer, chemically amplified resist composition, and patterning methodSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 2959US12535733B2Molecular resist composition and patterning processSHINETSU CHEMICAL CO·Filed 2022·Granted Jan 27, 2026·0 cites·17 claims
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Identity basis: exact name match across USPTO filings. How scoring works →