Inventor · name-matched record
FUKUZUMI YOSHIAKI
6 granted patents·9 pending applications·0 citations·filing 2022–2025
64Inventor score
Files withMICRON TECHNOLOGY INC15
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
15 records- 0189US2026088088A1Memory arrays having multiple strings of series-connected memory cells selectively connected in parallel, and their operationMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0287US2026038544A1Capacitive sensing with a micropump in a memory deviceMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0386US2026040541A1Memory Circuitry Comprising Strings of Memory Cells and Method Used in Forming a Memory Array Comprising Strings of Memory CellsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0476US12563787B2Electronic devices comprising a stack structure, a source contact, and a dielectric materialMICRON TECHNOLOGY INC·Filed 2024·Granted Feb 24, 2026·0 cites·20 claims
- 0574US2026040562A1Plug for protection of backside source formation of vertical planar memory cellsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0673US2026033302A1Multi-step etching in memory architecturesMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0772US2026040552A1Curved plug for protection of backside source formation of vertical planar memory cellsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0871US2026032911A1Methods of manufacturing an electronic circuit to increase the depth of a p-type region of a silicon column during manufacturingMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0969US12518827B2Memory arrays having multiple strings of series-connected memory cells selectively connected in parallel, their fabrication, and their operationMICRON TECHNOLOGY INC·Filed 2023·Granted Jan 6, 2026·0 cites·20 claims
- 1061US12543543B2Selective cavity merging for isolation regions in a memory dieMICRON TECHNOLOGY INC·Filed 2022·Granted Feb 3, 2026·0 cites·11 claims
- 1161US2026038541A1Dummy word line positioning for a plug for protection of backside source formation of vertical planar memory cellsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1261US2026040575A1Vertical chalcogenide memory device and methodMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1358US12575102B2Merged cavities and buried etch stops for three-dimensional memory arraysMICRON TECHNOLOGY INC·Filed 2022·Granted Mar 10, 2026·0 cites·20 claims
- 1457US12538491B2Lateral etch stops for access line formation in a memory dieMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 27, 2026·0 cites·17 claims
- 1557US12519060B2Techniques for concurrently-formed cavities in three-dimensional memory arraysMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 6, 2026·0 cites·25 claims
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Identity basis: exact name match across USPTO filings. How scoring works →