Inventor · name-matched record
GHANI TAHIR
29 granted patents·23 pending applications·2 citations·filing 2017–2025
91Inventor score
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
52 records- 0196US2026026325A1Gate contact structure over active gate and method to fabricate sameINTEL CORP·Filed 2025·Application pending·0 cites
- 0293US12538470B2Structures and methods for memory cellsINTEL CORP·Filed 2022·Granted Jan 27, 2026·1 cites·20 claims
- 0390US2026026046A1Integrated circuit structures having dielectric anchor voidINTEL CORP·Filed 2025·Application pending·0 cites
- 0488US12557625B2Spacer self-aligned via structures using directed self assembly for gate contact or trench contactINTEL CORP·Filed 2022·Granted Feb 17, 2026·1 cites·20 claims
- 0584US2026026096A1Integrated circuit structures having ultra-high conductivity global routingINTEL CORP·Filed 2025·Application pending·0 cites
- 0684US2026026057A1Integrated circuit structures having maximized channel sizingINTEL CORP·Filed 2025·Application pending·0 cites
- 0783US12538466B2Static random-access memory (SRAM) bit cell with channel depopulationINTEL CORP·Filed 2024·Granted Jan 27, 2026·0 cites·26 claims
- 0883US2026026093A1Integrated circuit structures having fin isolation regions recessed for gate contactINTEL CORP·Filed 2025·Application pending·0 cites
- 0982US2026052755A1Gate aligned fin cut for advanced integrated circuit structure fabricationINTEL CORP·Filed 2025·Application pending·0 cites
- 1081US2026026095A1Fin cut in neighboring gate and source or drain regions for advanced integrated circuit structure fabricationINTEL CORP·Filed 2025·Application pending·0 cites
- 1181US2026026039A1Gate-all-around integrated circuit structures having source or drain structures with regrown central portionsINTEL CORP·Filed 2025·Application pending·0 cites
- 1279US2026026332A1Integrated circuit structure with recessed self-aligned deep boundary viaINTEL CORP·Filed 2025·Application pending·0 cites
- 1375US12543349B2Transistors with ferroelectric gatesINTEL CORP·Filed 2023·Granted Feb 3, 2026·0 cites·20 claims
- 1474US12532526B2Metallic sealants in transistor arrangementsINTEL CORP·Filed 2022·Granted Jan 20, 2026·0 cites·23 claims
- 1567US12520482B2Memory arrays with backside components and angled transistorsINTEL CORP·Filed 2023·Granted Jan 6, 2026·0 cites·20 claims
- 1665US12588485B2Integrated circuit structures having airgaps for backside signal routing or power deliveryINTEL CORP·Filed 2022·Granted Mar 24, 2026·0 cites·20 claims
- 1765US12525295B2Two transistor memory cells with angled transistorsINTEL CORP·Filed 2023·Granted Jan 13, 2026·0 cites·20 claims
- 1865US2026081089A1Backend field emission devicesSHARMA ABHISHEK A·Filed 2024·Application pending·0 cites
- 1964US2026076182A1Varied substrate thickness for thermal managementSHARMA ABHISHEK A·Filed 2024·Application pending·0 cites
- 2063US2026082898A1Backend optical interconnectsSHARMA ABHISHEK A·Filed 2024·Application pending·0 cites
- 2163US2026086282A1Gated backend optical interconnectsSHARMA ABHISHEK A·Filed 2024·Application pending·0 cites
- 2262US12563724B2Two transistor memory cells with source-drain coupling in one transistorINTEL CORP·Filed 2022·Granted Feb 24, 2026·0 cites·20 claims
- 2362US2026006800A1Device, method and system to provide heterogeneous memory circuit stackingINTEL CORP·Filed 2024·Application pending·0 cites
- 2462US2026082829A1Gunn diodes for clock synchronization circuitsSHARMA ABHISHEK A·Filed 2024·Application pending·0 cites
- 2562US2026005094A1Device, method and system to conduct heat through an active layer of an integrated circuit dieINTEL CORP·Filed 2024·Application pending·0 cites
- 2662US2026005131A1Device, method and system to provide electrical coupling across active layers of an integrated circuit dieINTEL CORP·Filed 2024·Application pending·0 cites
- 2762US2026082604A1Low temperature tunnel diode for negative differential resistanceSHARMA ABHISHEK A·Filed 2024·Application pending·0 cites
- 2862US2026006801A1Vertically stacked memory arrays corresponding to respective single dopant typesINTEL CORP·Filed 2024·Application pending·0 cites
- 2961US12563774B2Integrated circuit structures with deep via structureINTEL CORP·Filed 2022·Granted Feb 24, 2026·0 cites·20 claims
- 3061US12532538B2Integrated circuit structures having conductive structures in fin isolation regionsINTEL CORP·Filed 2022·Granted Jan 20, 2026·0 cites·20 claims
- 3161US2026082828A1Gunn diode with layered structureSHARMA ABHISHEK A·Filed 2024·Application pending·0 cites
- 3261US2026082830A1Gunn diodes with doped epitaxial regionsSHARMA ABHISHEK A·Filed 2024·Application pending·0 cites
- 3360US2026096152A1Fabricating high quality, high stress channel regions in gate-all-around field effect transistors (gaa fets)INTEL CORP·Filed 2024·Application pending·0 cites
- 3458US12588189B2Memory devices with vertical transistorsINTEL CORP·Filed 2022·Granted Mar 24, 2026·0 cites·10 claims
- 3558US12563779B2Gate-all-around integrated structures having gate height reduction and dielectric capping material with shoulder portions inside gate stackINTEL CORP·Filed 2021·Granted Feb 24, 2026·0 cites·14 claims
- 3658US12527026B2Field-effect transistor with hybrid switching mechanismINTEL CORP·Filed 2022·Granted Jan 13, 2026·0 cites·19 claims
- 3758US12527078B2Gate-all-around integrated circuit structures having epitaxial source or drain region lateral isolationINTEL CORP·Filed 2021·Granted Jan 13, 2026·0 cites·10 claims
- 3857US12598803B2Integrated circuit structures having gate cut offsetINTEL CORP·Filed 2021·Granted Apr 7, 2026·0 cites·21 claims
- 3957US2026006912A1Sige nanoribbons for high performance transistorsINTEL CORP·Filed 2024·Application pending·0 cites
- 4056US12550732B2Single conductivity type devices for low temperature computationINTEL CORP·Filed 2022·Granted Feb 10, 2026·0 cites·22 claims
- 4156US12520573B2SiGe:GAB source or drain structures with low resistivityINTEL CORP·Filed 2022·Granted Jan 6, 2026·0 cites·25 claims
- 4255US12575401B2Integrated circuit devices with angled transistors and angled routing tracksINTEL CORP·Filed 2023·Granted Mar 10, 2026·0 cites·20 claims
- 4355US12550733B2Multiple epitaxial layer source and drain transistors for low temperature computationINTEL CORP·Filed 2022·Granted Feb 10, 2026·0 cites·23 claims
- 4455US12550381B2Device, method and system to provide epitaxial structures opposite sides of a separation layer between channel stacksINTEL CORP·Filed 2022·Granted Feb 10, 2026·0 cites·20 claims
- 4555US12532726B2Jumper gate for advanced integrated circuit structuresINTEL CORP·Filed 2021·Granted Jan 20, 2026·0 cites·20 claims
- 4654US12575170B2Low temperature, high germanium, high boron SiGe:B pEPI with a silicon rich capping layer for ultra-low PMOS contact resistivity and thermal stabilityINTEL CORP·Filed 2021·Granted Mar 10, 2026·0 cites·17 claims
- 4754US12575151B2Gate-all-around integrated circuit structures having doped subfinINTEL CORP·Filed 2021·Granted Mar 10, 2026·0 cites·20 claims
- 4854US12543558B2Self-aligned interconnect features for transistor contactsINTEL CORP·Filed 2022·Granted Feb 3, 2026·0 cites·20 claims
- 4953US12598777B2Low temperature, high germanium, high boron SiGe:B pEPI with titanium silicide contacts for ultra-low PMOS contact resistivity and thermal stabilityINTEL CORP·Filed 2021·Granted Apr 7, 2026·0 cites·14 claims
- 5048US12563782B2Fabrication of gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with differentiated dipole layersINTEL CORP·Filed 2022·Granted Feb 24, 2026·0 cites·20 claims
Showing the top 50 of 52 patent records by PatentIndex Score.
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Identity basis: exact name match across USPTO filings. How scoring works →