Inventor · name-matched record
GREENLEE JORDAN D
8 granted patents·20 pending applications·0 citations·filing 2021–2025
71Inventor score
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
28 records- 0195US2026075814A1Integrated Assemblies and Methods of Forming Integrated AssembliesMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0292US2026006784A1Integrated Circuitry Comprising a Memory Array Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory CellsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0392US2026006790A1Memory Arrays Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory CellsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0491US2026100227A1Memory Array Comprising Strings of Memory Cells and Method Used in Forming a Memory Array Comprising Strings of Memory CellsMICRON TECH INC·Filed 2025·Application pending·0 cites
- 0590US2026020234A1Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cellsLODESTAR LICENSING GROUP LLC·Filed 2025·Application pending·0 cites
- 0688US2026040555A1Memory Circuitry and Method Used in Forming Memory CircuitryMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0788US2026047096A1Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory CellsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0887US2026068170A1Barrier structure for preventing etching to control circuitryMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0984US2026101530A1Self-aligned etching techniques for memory formationMICRON TECH INC·Filed 2025·Application pending·0 cites
- 1083US2026047426A1Microelectronic devices comprising a boron-containing materialMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1183US2026082888A1Memory Arrays Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory CellsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1282US2026006856A1Methods of forming microelectronic devices including stack structures having doped interfacial regionsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1382US2026065992A1Memory Circuitry and Method Used in Forming Memory CircuitryMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1481US2026005145A1Memory device including control gates having tungsten structureMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1578US2026082893A1Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells And Memory Arrays Comprising Strings Of Memory CellsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1674US2026096104A1Supported capacitor electrode structure for memory deviceMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1771US2026040939A1Rivet isolation and methodMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1871US2026032889A1Epitaxial growth for substrate isolation in a three dimensional (3d) memory arrayMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1970US12525534B2Memory devices including conductive rails, and related methods and electronic systemsMICRON TECHNOLOGY INC·Filed 2023·Granted Jan 13, 2026·0 cites·12 claims
- 2068US2026040535A1Wordline contact isolation structure and methodMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2166US12518826B2Method used in forming a memory array comprising strings of memory cells comprising forming trenches between memory-block regions after forming trenches to form laterally-spaced sub-block regions in the memory-block regionsMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 6, 2026·0 cites·19 claims
- 2262US12598972B2Methods used in forming a memory array comprising strings of memory cells including insulator walls in a through-array-via regionMICRON TECH INC·Filed 2021·Granted Apr 7, 2026·0 cites·21 claims
- 2362US12520493B2Microelectronic devices including cap structures, and related electronic systems and methodsMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 6, 2026·0 cites·25 claims
- 2460US2026025986A1Selective memory cell contact linerMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2559US12543559B2Memory device including control gates having tungsten structureMICRON TECHNOLOGY INC·Filed 2021·Granted Feb 3, 2026·0 cites·25 claims
- 2658US12519011B2Staircase formation in a memory arrayMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 6, 2026·0 cites·6 claims
- 2750US12593680B2Integrated assemblies having liners or rings surrounding regions of conductive postsMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 31, 2026·0 cites·26 claims
- 2847US12563728B2Microelectronic devices including implant regions adjacent to dielectric slot structures, and related memory devices, electronic systems, and methodsMICRON TECHNOLOGY INC·Filed 2022·Granted Feb 24, 2026·0 cites·15 claims
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Identity basis: exact name match across USPTO filings. How scoring works →