Inventor · name-matched record
HAN CHANG WAN
1 granted patent·1 pending application·0 citations·filing 2021–2024
8Inventor score
Files withINTEL CORP2
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
2 records- 0154US12575151B2Gate-all-around integrated circuit structures having doped subfinINTEL CORP·Filed 2021·Granted Mar 10, 2026·0 cites·20 claims
- 0251US2026096162A1Arsenic-doped source/drain with phosphorus-doped contact region for dopant diffusion controlINTEL CORP·Filed 2024·Application pending·0 cites
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Identity basis: exact name match across USPTO filings. How scoring works →