Inventor · name-matched record
HILL RICHARD J
7 granted patents·5 pending applications·0 citations·filing 2020–2025
68Inventor score
Files withMICRON TECHNOLOGY INC12
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
12 records- 0186US2026040541A1Memory Circuitry Comprising Strings of Memory Cells and Method Used in Forming a Memory Array Comprising Strings of Memory CellsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0276US12563787B2Electronic devices comprising a stack structure, a source contact, and a dielectric materialMICRON TECHNOLOGY INC·Filed 2024·Granted Feb 24, 2026·0 cites·20 claims
- 0373US2026033302A1Multi-step etching in memory architecturesMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0473US2026040570A1Memory devices including charge trap memory cells and ferroelectric memory cellsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0571US2026033310A1Microelectronic devices with through-stack vias within shallow stadiums and outside of deep stadiums, and related methodsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0671US2026020238A1Techniques to form bridges between blocks of memory cellsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0769US12557289B2Electronic devices comprising adjoining oxide materials and related systemsMICRON TECHNOLOGY INC·Filed 2023·Granted Feb 17, 2026·0 cites·20 claims
- 0865US12593679B2Apparatuses and memory devices including air gaps between conductive linesMICRON TECHNOLOGY INC·Filed 2022·Granted Mar 31, 2026·0 cites·16 claims
- 0958US12575102B2Merged cavities and buried etch stops for three-dimensional memory arraysMICRON TECHNOLOGY INC·Filed 2022·Granted Mar 10, 2026·0 cites·20 claims
- 1054US12557274B2Methods used in forming a memory array comprising strings of memory cells including selectively etching sacrificial material in a memory-cell region selectively relative to insulating, insulator and/or insulative material(s) to form void spaces between conductive tiersMICRON TECHNOLOGY INC·Filed 2022·Granted Feb 17, 2026·0 cites·12 claims
- 1152US12568621B2Memory apparatus and methods including merged process for memory cell pillar and source structureMICRON TECHNOLOGY INC·Filed 2022·Granted Mar 3, 2026·0 cites·15 claims
- 1244US12543308B2Electronic structures comprising multiple, adjoining high-k dielectric materials and related electronic devices, systems, and methodsMICRON TECHNOLOGY INC·Filed 2020·Granted Feb 3, 2026·0 cites·19 claims
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Identity basis: exact name match across USPTO filings. How scoring works →