Inventor · name-matched record
HSIAO RU-SHANG
6 granted patents·2 pending applications·0 citations·filing 2020–2025
65Inventor score
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
8 records- 0180US12588223B2FinFET MOS capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 24, 2026·0 cites·20 claims
- 0268US2026101566A1Source/Drain Epitaxial Structures For High Voltage TransistorsTAIWAN SEMICONDUCTOR MFG COMPANY LTD·Filed 2025·Application pending·0 cites
- 0367US12568676B2High voltage devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 3, 2026·0 cites·20 claims
- 0463US12581711B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 17, 2026·0 cites·20 claims
- 0560US2026052725A1Shallow trench isolation structures and techniquesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0651US12538558B2Source/drain epitaxial structures for high voltage transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 27, 2026·0 cites·20 claims
- 0750US12563986B2Methods for fabricating semiconductor structures having transistor arrays with different pitchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 24, 2026·0 cites·20 claims
- 0849US12543334B2FinFET with long channel length structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 3, 2026·0 cites·20 claims
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Identity basis: exact name match across USPTO filings. How scoring works →