Inventor · name-matched record
HUANG CHIA-EN
10 granted patents·10 pending applications·0 citations·filing 2021–2025
77Inventor score
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
20 records- 0184US12520470B24CPP SRAM cell and arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jan 6, 2026·0 cites·20 claims
- 0281US2026040537A1Memory devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0380US2026059827A1Cfet with via fuse structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0479US12575107B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 10, 2026·0 cites·20 claims
- 0577US12597466B2Semiconductor memory devices with differential threshold voltagesTAIWAN SEMICONDUCTOR MFG COMPANY LTD·Filed 2024·Granted Apr 7, 2026·0 cites·20 claims
- 0676US12588197B2Semiconductor memory devices with one-sided staircase profiles and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 24, 2026·0 cites·20 claims
- 0772US12586619B2Integrated circuit device and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 24, 2026·0 cites·20 claims
- 0869US2026047086A1High-Isolation P-Substrate on RF PMOSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0968US12588213B2Semiconductor memory structure having enhanced memory window and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 24, 2026·0 cites·20 claims
- 1067US2026089938A1Memory devices with different conductive types and methods for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1167US2026052976A1Memory devices and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1267US2026059745A1Memory devices programmed with dielectric structures and methods for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1364US12580033B2Read-only memory method, layout, and deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 17, 2026·0 cites·20 claims
- 1464US2026052977A1Semiconductor device including dummy memory structures, and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1563US2026068151A1Device with High-Density Memory Cells and Method of Manufacturing the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1660US12563721B2Memory device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 24, 2026·0 cites·20 claims
- 1759US2026040639A1Semiconductor device having flexible assembled abutting regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1857US12543322B2Ferroelectric memory device with carrier structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 3, 2026·0 cites·20 claims
- 1950US12562216B2Circuit with swept voltage on bit line or bit line barTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 24, 2026·0 cites·20 claims
- 2046US2026047157A1Nanosheet devices with gate isolation structures and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
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Identity basis: exact name match across USPTO filings. How scoring works →