Inventor · name-matched record
HUANG LIN-YU
13 granted patents·5 pending applications·1 citations·filing 2020–2025
82Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD18
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
18 records- 0190US2026082894A1Field effect transistor with source/drain via and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0285US12525485B2Gate contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 13, 2026·1 cites·20 claims
- 0384US12557643B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 17, 2026·0 cites·20 claims
- 0483US2026075897A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0582US12568670B2Self-aligned contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 3, 2026·0 cites·20 claims
- 0682US2026068688A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0780US2026076164A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0875US12538791B2Source/drain contact for semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 27, 2026·0 cites·20 claims
- 0972US12532505B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 20, 2026·0 cites·20 claims
- 1071US12543364B2Integrated circuit with backside metal gate cut for reduced coupling capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 3, 2026·0 cites·20 claims
- 1167US12550370B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 10, 2026·0 cites·20 claims
- 1266US12573843B2GaN-based semiconductor device and electrostatic discharge (ESD) clamp circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 10, 2026·0 cites·20 claims
- 1365US12532498B2Semiconductor device with reverse-cut source/drain contact structure and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 20, 2026·0 cites·20 claims
- 1460US2026026031A1Electrostatic discharge protection device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1558US12568664B2Semiconductor device and method of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 3, 2026·0 cites·20 claims
- 1655US12525486B2Isolation structure for metal interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 13, 2026·0 cites·20 claims
- 1754US12575464B2Method of forming wafer-to-wafer bonding structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 10, 2026·0 cites·20 claims
- 1853US12568775B2Method for forming a memory device at a backside of a wafer substrate, and memory cell including a memory device at a backside of a wafer substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 3, 2026·0 cites·20 claims
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Identity basis: exact name match across USPTO filings. How scoring works →