Inventor · name-matched record
HUO ZONGLIANG
13 granted patents·35 pending applications·1 citations·filing 2022–2025
82Inventor score
Files withYANGTZE MEMORY TECH CO LTD33YANGTZE MEMORY TECH HOLDING CO LTD14YANGTZE MOMORY TECH HOLDING CO LTD1
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
48 records- 0196US2026096099A1Three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0291US12520486B2Memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jan 6, 2026·1 cites·10 claims
- 0388US2026047095A1Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0487US2026068625A1Vertical memory devices and method of fabrication thereofYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0585US12575105B2Multiple-stack three-dimensional memory device and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Granted Mar 10, 2026·0 cites·20 claims
- 0684US2026089963A1Three-dimensional nand memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0782US2026082563A1Memory system, semiconductor device and fabrication method thereforYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0881US12526996B2Three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jan 13, 2026·0 cites·20 claims
- 0981US2026047373A1Gateline mask design for removing sacrificial gateline polysilicon within stair step areaYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 1068US2026082542A1Semiconductor device and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1168US2026052687A1Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1268US2026033317A1Semiconductor package structures and fabrication methods thereofYANGTZE MEMORY TECH HOLDING CO LTD·Filed 2025·Application pending·0 cites
- 1367US2026066011A1Memory devices, operating methods thereof and memory systemsYANGTZE MEMORY TECH HOLDING CO LTD·Filed 2025·Application pending·0 cites
- 1467US2026096097A1Semiconductor devices and fabrication methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1567US2026047082A1Memory device and manufacturing method thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1667US2026013127A1Managing pad-out structures in semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1766US12593445B2Control gate structures in three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Mar 31, 2026·0 cites·15 claims
- 1866US12581649B2Semiconductor device, fabrication method, and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Mar 17, 2026·0 cites·20 claims
- 1966US12568624B2Memory device containing TSG deck and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Mar 3, 2026·0 cites·9 claims
- 2066US2026038604A1Semiconductor devices and methods of operating thereof, systems, and computer readable storage mediumsYANGTZE MEMORY TECH HOLDING CO LTD·Filed 2025·Application pending·0 cites
- 2166US2026065991A1Semiconductor device and operating method thereof, and systemYANGTZE MEMORY TECH HOLDING CO LTD·Filed 2025·Application pending·0 cites
- 2266US2026032906A1Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 2365US12597468B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Apr 7, 2026·0 cites·20 claims
- 2465US12557299B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Feb 17, 2026·0 cites·20 claims
- 2565US2026025999A1Semiconductor structure, manufacturing method thereof and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 2665US2026025998A1Semiconductor structure, manufacturing method thereof, and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 2764US2026025990A1Memory device and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 2864US2026020257A1Three-dimensional semiconductor devices and manufacturing methods thereofYANGTZE MEMORY TECH HOLDING CO LTD·Filed 2025·Application pending·0 cites
- 2963US2026068145A1Semiconductor structures and fabrication methods thereofYANGTZE MEMORY TECH HOLDING CO LTD·Filed 2024·Application pending·0 cites
- 3062US12598748B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Apr 7, 2026·0 cites·20 claims
- 3162US2026096098A1Managing isolating structures in semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 3262US2026013126A1Memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 3361US12543310B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Feb 3, 2026·0 cites·20 claims
- 3459US12557276B2Memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Feb 17, 2026·0 cites·15 claims
- 3559US2026047071A1Semiconductor device and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 3659US2026076159A1Managing isolating structures in semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 3759US2026026379A1Semiconductor structure and fabrication method thereofYANGTZE MEMORY TECH HOLDING CO LTD·Filed 2024·Application pending·0 cites
- 3859US2026068178A1Semiconductor devices and fabricating methods thereofYANGTZE MEMORY TECH HOLDING CO LTD·Filed 2024·Application pending·0 cites
- 3958US12520488B2Three-dimensional memory device and fabrication method for improved yield and reliabilityYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jan 6, 2026·0 cites·14 claims
- 4058US2026068175A1Memory devices and fabrication methods thereofYANGTZE MEMORY TECH HOLDING CO LTD·Filed 2024·Application pending·0 cites
- 4157US2026080947A1Semiconductor device and operating method thereof and systemYANGTZE MOMORY TECH HOLDING CO LTD·Filed 2025·Application pending·0 cites
- 4256US12541839B2Method and device for determining coordinates of contact through-holes in memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Feb 3, 2026·0 cites·19 claims
- 4356US2026052966A1Semiconductor structures and fabrication methods thereofYANGTZE MEMORY TECH HOLDING CO LTD·Filed 2025·Application pending·0 cites
- 4455US2026088087A1Semiconductor device, method of operating thereof, system, and computer-readable storage mediumYANGTZE MEMORY TECH HOLDING CO LTD·Filed 2025·Application pending·0 cites
- 4555US2026089929A1Memory device, fabrication method and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 4654US2026018211A1Semiconductor device and method of operating thereof, system, and computer readable storage mediumYANGTZE MEMORY TECH HOLDING CO LTD·Filed 2025·Application pending·0 cites
- 4752US2026032880A1Semiconductor package structure and fabrication method thereofYANGTZE MEMORY TECH HOLDING CO LTD·Filed 2024·Application pending·0 cites
- 4850US2026096481A1Semiconductor package structure, fabrication method and memory systemYANGTZE MEMORY TECH HOLDING CO LTD·Filed 2025·Application pending·0 cites
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Identity basis: exact name match across USPTO filings. How scoring works →