Inventor · name-matched record
KAVALIEROS JACK T
12 granted patents·2 citations·filing 2017–2023
81Inventor score
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
12 records- 0193US12538470B2Structures and methods for memory cellsINTEL CORP·Filed 2022·Granted Jan 27, 2026·1 cites·20 claims
- 0284US12550373B2Selective removal of channel bodies in stacked gate-all-around (GAA) device structuresINTEL CORP·Filed 2022·Granted Feb 10, 2026·1 cites·16 claims
- 0381US12520528B2Top-gate doped thin film transistorINTEL CORP·Filed 2023·Granted Jan 6, 2026·0 cites·20 claims
- 0475US12543349B2Transistors with ferroelectric gatesINTEL CORP·Filed 2023·Granted Feb 3, 2026·0 cites·20 claims
- 0574US12532526B2Metallic sealants in transistor arrangementsINTEL CORP·Filed 2022·Granted Jan 20, 2026·0 cites·23 claims
- 0658US12568644B2Contact over active gate structures with trench contact layers for advanced integrated circuit structure fabricationINTEL CORP·Filed 2021·Granted Mar 3, 2026·0 cites·10 claims
- 0758US12557352B2Forksheet transistor device with air gap spineINTEL CORP·Filed 2021·Granted Feb 17, 2026·0 cites·20 claims
- 0853US12557340B2Cladding and condensation for strained semiconductor nanoribbonsINTEL CORP·Filed 2021·Granted Feb 17, 2026·0 cites·20 claims
- 0952US12538516B2Forksheet transistor with asymmetric dielectric spineINTEL CORP·Filed 2021·Granted Jan 27, 2026·0 cites·15 claims
- 1051US12543351B2Enriched semiconductor nanoribbons for producing intrinsic compressive strainINTEL CORP·Filed 2021·Granted Feb 3, 2026·0 cites·20 claims
- 1144US12575184B2CMOS architecture with thermally stable silicide gate workfunction metalLILAK AARON D·Filed 2021·Granted Mar 10, 2026·0 cites·20 claims
- 1241US12550401B2Doped STI to reduce source/drain diffusion for germanium NMOS transistorsINTEL CORP·Filed 2017·Granted Feb 10, 2026·0 cites·22 claims
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Identity basis: exact name match across USPTO filings. How scoring works →