Inventor · name-matched record
KOBRINSKY MAURO J
5 granted patents·3 pending applications·0 citations·filing 2021–2025
60Inventor score
Files withINTEL CORP8
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
8 records- 0181US12519058B2Device layer interconnectsINTEL CORP·Filed 2023·Granted Jan 6, 2026·0 cites·20 claims
- 0278US2026026042A1Gate-all-around integrated circuit structures having backside contact with enhanced area relative to epitaxial sourceINTEL CORP·Filed 2025·Application pending·0 cites
- 0361US12532538B2Integrated circuit structures having conductive structures in fin isolation regionsINTEL CORP·Filed 2022·Granted Jan 20, 2026·0 cites·20 claims
- 0457US2026096139A1Source or drain structures with vertical trenches having contacts thereinINTEL CORP·Filed 2024·Application pending·0 cites
- 0556US12520573B2SiGe:GAB source or drain structures with low resistivityINTEL CORP·Filed 2022·Granted Jan 6, 2026·0 cites·25 claims
- 0655US2026005140A1Technologies for air gaps in semiconductor dies with aluminum oxide linersINTEL CORP·Filed 2024·Application pending·0 cites
- 0754US12575170B2Low temperature, high germanium, high boron SiGe:B pEPI with a silicon rich capping layer for ultra-low PMOS contact resistivity and thermal stabilityINTEL CORP·Filed 2021·Granted Mar 10, 2026·0 cites·17 claims
- 0853US12598777B2Low temperature, high germanium, high boron SiGe:B pEPI with titanium silicide contacts for ultra-low PMOS contact resistivity and thermal stabilityINTEL CORP·Filed 2021·Granted Apr 7, 2026·0 cites·14 claims
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Identity basis: exact name match across USPTO filings. How scoring works →