Inventor · name-matched record
LAI TE-YANG
3 granted patents·1 pending application·0 citations·filing 2022–2025
44Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD4
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
4 records- 0189US2026075925A1Nanostructure field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0284US12588231B2Method of gap filling for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 24, 2026·0 cites·19 claims
- 0359US12568662B2Semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 3, 2026·0 cites·20 claims
- 0455US12598784B2Semiconductor device having doped gate dielectric layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 7, 2026·0 cites·20 claims
Join the waitlist — get patent alerts
Get an alert when LAI TE-YANG files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: exact name match across USPTO filings. How scoring works →