Inventor · name-matched record
LEE TZE-LIANG
4 granted patents·6 pending applications·0 citations·filing 2022–2024
57Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD10
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
10 records- 0183US12557572B2Method for manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 17, 2026·0 cites·20 claims
- 0273US12557620B2Transistor contacts and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 17, 2026·0 cites·20 claims
- 0372US12564028B2Dielectric layers having nitrogen-containing crusted surfacesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 24, 2026·0 cites·20 claims
- 0470US12598767B2Dielectric layers for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 7, 2026·0 cites·20 claims
- 0562US2026047139A1Semiconductor device and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0662US2026089993A1Semiconductor device gate structure and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0762US2026006815A1Shallow-trench isolation protection structure for nanostructure field-effect transistor device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0862US2026075856A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0961US2026052715A1Nanowire field effect transistor and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1061US2026052957A1Method of forming multi-gate transistors and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
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Identity basis: exact name match across USPTO filings. How scoring works →