Inventor · name-matched record
LI TAO
28 granted patents·42 pending applications·0 citations·filing 2021–2025
90Inventor score
Files withIBM40INT BUSINESS MACHINES CORPORATION4BEIJING YOUZHUJU NETWORK TECH CO LTD2BOE TECHNOLOGY GROUP CO LTD2HENGDIAN GROUP TOSPO LIGHTING CO LTD2
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
70 records- 0181US2026047031A1Static data center power balancing and configurationNVIDIA CORP·Filed 2025·Application pending·0 cites
- 0278US2026072650A1Client and test code generation of encoded security policiesZOOM COMMUNICATIONS INC·Filed 2025·Application pending·0 cites
- 0371US12550351B2Diffusion break between passive device and logic device with backside contactIBM·Filed 2023·Granted Feb 10, 2026·0 cites·20 claims
- 0467US12598789B2Self-aligned backside contactINT BUSINESS MACHINES CORPORATION·Filed 2023·Granted Apr 7, 2026·0 cites·20 claims
- 0567US12588266B2CMOS integration for doped placeholder as direct backside contactIBM·Filed 2023·Granted Mar 24, 2026·0 cites·20 claims
- 0667US12581723B2Backside power viaIBM·Filed 2023·Granted Mar 17, 2026·0 cites·20 claims
- 0766US2026093526A1Load balancing method for distributed system, electronic device, non-transitory computer-readable storage mediumBEIJING VOLCANO ENGINE TECHNOLOGY CO LTD·Filed 2025·Application pending·0 cites
- 0865US12588277B2Forming wrap around contact with self-aligned backside contactIBM·Filed 2023·Granted Mar 24, 2026·0 cites·13 claims
- 0965US12550715B2Heterogeneous integration of device die having BSPDNIBM·Filed 2023·Granted Feb 10, 2026·0 cites·14 claims
- 1065US2026030410A1Simulation method for marine seismic ground motion applicable to seismic analysis of offshore wind powerUNIV SICHUAN·Filed 2025·Application pending·0 cites
- 1164US12557338B2Semiconductor structure having a backside contact with backside sidewall spacersIBM·Filed 2022·Granted Feb 17, 2026·0 cites·20 claims
- 1264US2026090021A1Deep via to preserve substrateIBM·Filed 2024·Application pending·0 cites
- 1364US2026101523A1Metal-insulator-metal capacitor with protection layerINT BUSINESS MACHINES CORPORATION·Filed 2024·Application pending·0 cites
- 1463US12572477B2Processor, address translation, based on plurality of memory management units (MMUs), method and apparatus, storage medium, and program productHUAWEI TECH CO LTD·Filed 2024·Granted Mar 10, 2026·0 cites·20 claims
- 1563US12550785B2Separated input/output (I/O) and shared power terminals for a carrier wafer with a built-in device for bonding with another device waferIBM·Filed 2022·Granted Feb 10, 2026·0 cites·20 claims
- 1663US2026090109A1Stacked fet with recessed channel transistors at bottomIBM·Filed 2024·Application pending·0 cites
- 1763US2026090015A1Self aligned backside contactIBM·Filed 2024·Application pending·0 cites
- 1863US2026082630A1Self aligned backside channel removalIBM·Filed 2024·Application pending·0 cites
- 1963US2026013179A1Vertical nanosheet transistor with backside source/drain contactIBM·Filed 2024·Application pending·0 cites
- 2063US2026005141A1Optimized 3d integrated backside power delivery structureIBM·Filed 2024·Application pending·0 cites
- 2163US2026018518A1Backside trench isolation for high voltage device integrationIBM·Filed 2024·Application pending·0 cites
- 2263US2026018508A1Backside deep trench capacitorIBM·Filed 2024·Application pending·0 cites
- 2363US2026090038A1Forksheet transistor multilayer bottom isolation regionIBM·Filed 2024·Application pending·0 cites
- 2463US2026068222A1Backside contact without rx linerIBM·Filed 2024·Application pending·0 cites
- 2562US12588265B2Semiconductor structure with enhanced placeholder position marginIBM·Filed 2023·Granted Mar 24, 2026·0 cites·20 claims
- 2662US12557626B2Self-aligned backside contact with deep trench last flowIBM·Filed 2022·Granted Feb 17, 2026·0 cites·11 claims
- 2762US2026033315A1Power Gating in Integrated CircuitIBM·Filed 2024·Application pending·0 cites
- 2862US2026068655A1Super via connection as capacitor and thermal conductorIBM·Filed 2024·Application pending·0 cites
- 2962US2026076185A1Backside dual dielectric fill for better thermal conductivityIBM·Filed 2024·Application pending·0 cites
- 3062US2026101535A1Forming placeholder for backside contactINT BUSINESS MACHINES CORPORATION·Filed 2024·Application pending·0 cites
- 3162US2026043536A1Adjustable downlight and adjusting method thereofHENGDIAN GROUP TOSPO LIGHTING CO LTD·Filed 2025·Application pending·0 cites
- 3262US2026101549A1Placeholder for backside contactINT BUSINESS MACHINES CORPORATION·Filed 2024·Application pending·0 cites
- 3362US2026049701A1Downlight with multiple switchable lighting modes and implementation method of downlightHENGDIAN GROUP TOSPO LIGHTING CO LTD·Filed 2025·Application pending·0 cites
- 3462US2026026040A1Dual silicide shared source/drain contactIBM·Filed 2024·Application pending·0 cites
- 3562US2026005119A1Coaxial through-insulator via (tiv) with lateral metal footing connection for chiplet power signal connectionIBM·Filed 2024·Application pending·0 cites
- 3662US2026026070A1Source/drain contact in single diffusion break regionIBM·Filed 2024·Application pending·0 cites
- 3762US2026032998A1Flexible active region for stacked fetsIBM·Filed 2024·Application pending·0 cites
- 3862US2026005142A1Inner spacer as etch stop layer for backside power railIBM·Filed 2024·Application pending·0 cites
- 3962US2026052701A1Capacitor dielectric layer, manufacturing method therefor, and capacitor structureCXMT CORP·Filed 2025·Application pending·0 cites
- 4062US2026075876A1Nanosheet device backside connecting to both vdd and vss at the same levelIBM·Filed 2024·Application pending·0 cites
- 4161US12575140B2Diffusion break structure for transistorsIBM·Filed 2022·Granted Mar 10, 2026·0 cites·20 claims
- 4261US12557633B2Multiple critical dimension power railIBM·Filed 2022·Granted Feb 17, 2026·0 cites·25 claims
- 4361US2026076165A1Frontside via within single diffusion break for backside power railIBM·Filed 2024·Application pending·0 cites
- 4461US2026047191A1Fets with dummy nanosheetsIBM·Filed 2024·Application pending·0 cites
- 4561US2026068299A1Contact configurations for forksheet devicesIBM·Filed 2024·Application pending·0 cites
- 4661US2026032956A1Modifying gate all around finfet fins from backsideIBM·Filed 2024·Application pending·0 cites
- 4760US12550620B2Top electrode to metal line connection for magneto-resistive random-access memory stack height reductionIBM·Filed 2021·Granted Feb 10, 2026·0 cites·11 claims
- 4860US2026001851A1Tyrosine kinase inhibitors and pharmaceutical application thereofJIANGSU CONCORD BIOTECHNOLOGY CO LTD·Filed 2025·Application pending·0 cites
- 4960US2026013178A1Independent gate contact connection for stacked transistorsIBM·Filed 2024·Application pending·0 cites
- 5059US12561587B2Data processing method, electronic device, and storage mediumBEIJING YOUZHUJU NETWORK TECH CO LTD·Filed 2025·Granted Feb 24, 2026·0 cites·20 claims
Showing the top 50 of 70 patent records by PatentIndex Score.
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Identity basis: exact name match across USPTO filings. How scoring works →