Inventor · name-matched record
LIANG CHUN-SHENG
5 granted patents·4 pending applications·0 citations·filing 2022–2025
58Inventor score
Technology areasH10D
Files withTAIWAN SEMICONDUCTOR MFG CO LTD9
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
9 records- 0190US2026090085A1Gate Dielectric Having A Non-Uniform Thickness ProfileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0280US2026026050A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0361US12538533B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 27, 2026·0 cites·20 claims
- 0461US2026082631A1Bottom Insulation for Multigate DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0560US12563798B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 24, 2026·0 cites·20 claims
- 0660US2026068256A1Isolation structure in semiconductor device and method for manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0759US12575146B2Semiconductor structure, semiconductor assembly and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 10, 2026·0 cites·20 claims
- 0858US12520574B2Semiconductor device structure including forksheet transistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 6, 2026·0 cites·20 claims
- 0956US12581703B2Multilayer gate isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 17, 2026·0 cites·20 claims
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Identity basis: exact name match across USPTO filings. How scoring works →