Inventor · name-matched record
LIANG YAO-HSIANG
2 granted patents·0 citations·filing 2022–2022
28Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD2
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
2 records- 0179US12557401B2Method of forming deep trench isolation in radiation sensing substrate and image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 17, 2026·0 cites·20 claims
- 0248US12557619B2Semiconductor structure including multiple barrier layers and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 17, 2026·0 cites·20 claims
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Identity basis: exact name match across USPTO filings. How scoring works →