Inventor · name-matched record
LIAO SZUYA
4 granted patents·11 pending applications·1 citations·filing 2022–2025
56Inventor score
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
15 records- 0188US12520577B2Complementary field effect transistor with hybrid nanostructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 6, 2026·1 cites·11 claims
- 0280US2026032991A1Integrated circuit with stacked transistors having inductors at both sides of substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0377US2026013192A1Semiconductor Structures With Reduced Parasitic Capacitance And Methods For Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0468US12520562B2Semiconductor device with germanium-based channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 6, 2026·0 cites·20 claims
- 0561US2026033300A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0659US2026100221A1Compute-in-memory circuits and methods for operating the sameTAIWAN SEMICONDUCTOR MFG COMPANY LTD·Filed 2025·Application pending·0 cites
- 0757US12581745B2Integrated circuit and system for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 17, 2026·0 cites·20 claims
- 0856US12593681B2Semiconductor device including dielectrics made of porous organic frameworks, and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 31, 2026·0 cites·20 claims
- 0951US2026100206A1Semiconductor memory devices with embedded power structure and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG COMPANY LTD·Filed 2025·Application pending·0 cites
- 1049US2026082688A1Backside gate contact and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1147US2026082533A1Memory structures with middle strap cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1247US2026082675A1Bottom dielectric isolation layer as an esl and a backside self-alignment featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1346US2026096198A1Protective structures in stacking transistors and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1445US2026096202A1Integrated circuit device and method of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1544US2026096201A1Channel isolation structures in stacking transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
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Identity basis: exact name match across USPTO filings. How scoring works →