Inventor · name-matched record
LIAW JHON JHY
17 granted patents·21 pending applications·0 citations·filing 2021–2025
86Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD35PARABELLUM STRATEGIC OPPORTUNITIES FUND LLC2TAIWAN SEMICONDUCTOR MFG COMPANY LTD1
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
38 records- 0195US2026059854A1Method Of Manufacturing Semiconductor Device And A Semiconductor DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0294US2026040672A1Semiconductor device and method for forming the samePARABELLUM STRATEGIC OPPORTUNITIES FUND LLC·Filed 2025·Application pending·0 cites
- 0389US12564037B2Semiconductor device with source/drain viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 24, 2026·0 cites·20 claims
- 0486US12563829B2Device having a diffusion break structure extending within a fin and interfacing with a source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 24, 2026·0 cites·20 claims
- 0585US12575138B2Structure and method for FinFET device with asymmetric contactPARABELLUM STRATEGIC OPPORTUNITIES FUND LLC·Filed 2024·Granted Mar 10, 2026·0 cites·20 claims
- 0685US12550425B2Multi-gate device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 10, 2026·0 cites·20 claims
- 0783US2026032988A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0881US12520520B2Isolation structure for isolating source/drain region structure from adjacent source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jan 6, 2026·0 cites·20 claims
- 0979US2026052740A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1078US12520469B2Integrated circuits with contacting gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 6, 2026·0 cites·20 claims
- 1173US2026013218A1Semiconductor devices and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1272US12588245B2Method for manufacturing for forming source/drain contact features and devices manufactured thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 24, 2026·0 cites·20 claims
- 1369US2026089909A1Semiconductor device having high density and high performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1467US12598785B2Semiconductor devices and methods of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 7, 2026·0 cites·20 claims
- 1566US12532504B2Device structure with reduced leakage currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 20, 2026·0 cites·20 claims
- 1666US12520471B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 6, 2026·0 cites·20 claims
- 1764US12588246B2Semiconductor structure including gate stack surrounding or wrapping around plurality of semiconductor layers or nanostructures and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 24, 2026·0 cites·20 claims
- 1864US2026020212A1Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1963US12557375B2Semiconductor devices and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 17, 2026·0 cites·20 claims
- 2063US12532445B2Manufacturing method of semiconductor structure including static random access memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 20, 2026·0 cites·20 claims
- 2163US2026082532A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2263US2026068631A1Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2362US12538534B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 27, 2026·0 cites·20 claims
- 2462US2026032958A1Bottom Isolations and Methods of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2562US2026020272A1Structure and formation method of semiconductor device with epitaxial structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2662US2026047197A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2762US2026059826A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2862US2026020339A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2962US2026068223A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3061US12593489B2Semiconductor structure including gate spacer layer and dielectric layer having portion lower than top surface of gate spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 31, 2026·0 cites·20 claims
- 3161US2026075879A1Pyramid geometry metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3260US2026047156A1Gate-all-around transistors with reduced parasitic capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3360US2026068253A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3458US12520574B2Semiconductor device structure including forksheet transistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 6, 2026·0 cites·20 claims
- 3556US12581705B2Semiconductor device including multiple stacks of semiconductor nanosheets, multiple strained layers, and dielectric wall located strained layers and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 17, 2026·0 cites·20 claims
- 3655US2026101490A1Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG COMPANY LTD·Filed 2024·Application pending·0 cites
- 3755US2026065948A1Memory device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3854US2026024578A1Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
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Identity basis: exact name match across USPTO filings. How scoring works →