Inventor · name-matched record
LIN CHUNG-TE
10 granted patents·4 pending applications·0 citations·filing 2022–2025
77Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD14
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
14 records- 0195US2026082576A1Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0290US2026075838A1Memory cell device with thin-film transistor selector and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0385US12575137B2Thin film transistor including a compositionally-modulated active region and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 10, 2026·0 cites·20 claims
- 0484US2026075940A1Method of forming semiconductor device having stop segment in connection region between logic region and memory cell regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0582US2026006834A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0676US12550383B2Double gate ferroelectric field effect transistor devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 10, 2026·0 cites·20 claims
- 0775US12550331B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 10, 2026·0 cites·20 claims
- 0871US12563742B2Multi-gate selector switches for memory cells and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 24, 2026·0 cites·20 claims
- 0968US12538475B2Drain sharing for memory cell thin film access transistors and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 27, 2026·0 cites·20 claims
- 1063US12563739B2Vertical field effect transistors and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 24, 2026·0 cites·20 claims
- 1163US12550624B2Semiconductor memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 10, 2026·0 cites·20 claims
- 1258US12563807B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 24, 2026·0 cites·20 claims
- 1358US12563778B2Semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 24, 2026·0 cites·20 claims
- 1458US12532666B2Method for manufacturing a memory device using multiple etching processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 20, 2026·0 cites·20 claims
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Identity basis: exact name match across USPTO filings. How scoring works →