Inventor · name-matched record
LIN HSING-LIEN
2 granted patents·2 pending applications·0 citations·filing 2023–2025
29Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD4
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
4 records- 0194US2026090287A1Thermal dispersion layer in programmable metallization cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0291US2026096110A1Amorphous bottom electrode structure for mim capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0382US12527014B2Amorphous bottom electrode structure for MIM capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jan 13, 2026·0 cites·20 claims
- 0473US12588271B2Multi-layer electrode to improve performance of ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 24, 2026·0 cites·20 claims
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Identity basis: exact name match across USPTO filings. How scoring works →