Inventor · name-matched record
LIN PINYEN
7 granted patents·8 pending applications·0 citations·filing 2022–2025
69Inventor score
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
15 records- 0185US12575156B2Reducing pattern loading in the etch-back of metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 10, 2026·0 cites·20 claims
- 0284US2026075893A1Isolation structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0382US2026101538A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG COMPANY LTD·Filed 2025·Application pending·0 cites
- 0481US12520558B2High selectivity etching with germanium-containing gasesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jan 6, 2026·0 cites·20 claims
- 0580US2026076164A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0673US12527072B2Self-aligned patterning layer for metal gate formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 13, 2026·0 cites·20 claims
- 0773US12520532B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 6, 2026·0 cites·20 claims
- 0867US2026040626A1Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0963US12598937B2Epitaxial formation with treatment and semiconductor devices resulting therefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 7, 2026·0 cites·20 claims
- 1062US2026096163A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1160US2026068557A1Method for manufacturing semiconductor device with reduced interfacial layer thicknessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1259US2026090064A1Gate contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1358US2026059779A1Gate-all-around devices and method for manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1454US12581923B2Method for removing edge of substrate in semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 17, 2026·0 cites·20 claims
- 1553US12568775B2Method for forming a memory device at a backside of a wafer substrate, and memory cell including a memory device at a backside of a wafer substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 3, 2026·0 cites·20 claims
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Identity basis: exact name match across USPTO filings. How scoring works →